- Synthesis of polysilanes by tunneling reactions of H atoms with solid Si2H6 at 10K
-
Tunneling reactions of H atoms with solid Si2H6 at 10K were investigated. The in situ and real-time reactions H + Si 2H6 to form silane and polysilanes were monitored using FT-IR. Quantitative analysis of gaseou
- Sogoshi, Norihito,Sato, Shoji,Takashima, Hideaki,Sato, Tetsuya,Hiraoka, Kenzo
-
p. 986 - 987
(2012/09/22)
-
- Diagnostics of the gas-phase thermal decomposition of Si2H6 using vacuum ultraviolet photoionization
-
Vacuum ultraviolet (VUV) photoionization at 10.2 eV was employed for the detection of gas-phase molecules formed after thermal decomposition of disilane at a total pressure of 30 Torr and in the temperature range of 298-740 K. The SinH2(n+1) (n=3-5) and SinH2n (n=2-5) species resulting from disilane pyrolysis in a flow reactor were directly observed using time-of-flight mass spectrometry. Unlike multiphoton ionization at 6.4 eV photons, no fragmentation was observed by the VUV single-photon ionization at 10.2 eV.
- Tonokura, Kenichi,Murasaki, Tetsuya,Koshi, Mitsuo
-
p. 507 - 511
(2008/10/08)
-
- The 147-nm Photolysis of Disilane
-
The photodecomposition of Si2H6 at 147 nm results in the formation of H2, SiH4, Si3H8, Si4H10, Si5H12, and a solid film of amorphous silicon hydride (a-Si:H).Three primary processes are proposed to accoount for the results, namely, (a) Si2H6 + hν -> SiH2 + SiH3 + H (φa=0.61); (b) Si2H6 + hν -> SiH3SiH + 2H (φb=0.18); (c) Si2H6 + hν -> Si2H5 + H (φc=0.21).The overall quantum yields depend on the pressure but at 1 Torr partial pressure of Si2H6 are Φ(-Si2H6)=4.3+/-0.2, Φ(SiH4)=1.2+/-0.4, Φ(Si3H8)=0.91+/-0.08, Φ(Si4H10)=0.62+/-0.03, Φ(Si,wall)=2.2.Quantum yields for H2 formation were not measured.A mechanism is proposed which is shown to be in accord with the experimental facts.
- Perkins, G. G. A.,Lampe, F. W.
-
p. 3764 - 3769
(2007/10/02)
-