- Method for manufacturing of alkylaminosilane compound
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The present invention relates to a method for preparing alkylaminosilane compounds capable of obtaining high purity alkylaminosilane compounds in high yield.
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Paragraph 0087-0089
(2021/04/29)
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- METHOD FOR PRODUCING AMINOSILANES
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PROBLEM TO BE SOLVED: To improve the yield of aminosilanes in a method for synthesizing aminosilanes by reacting chlorosilanes and secondary amine using a plurality of solvents. SOLUTION: Provided is a method for producing aminosilanes where a proportion of raw material chlorosilanes is set in a range of 0.2 to 0.8 mol/L. SELECTED DRAWING: None COPYRIGHT: (C)2019,JPOandINPIT
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Paragraph 0042-0049
(2019/07/03)
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- Synthesis method of bis(diethylamino)silane
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The invention provides a synthesis method of bis(diethylamino)silane. The method is characterized by comprising the following steps of adding 100 parts of dichlorosilane, 1000 to 2000 parts of hexaneand 5 to 20 parts of white clay catalysts into a reactor in parts by weight; introducing nitrogen gas; dripping 300 to 600 parts of diethylamine under the stirring condition for reaction; maintainingthe temperature of the reaction system at 40 to 60 DEG C; after the dripping completion, performing heat insulation for 5 to 10 hours; then, obtaining the bis(diethylamino)silane by the existing impurity removal technology in industry.
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Paragraph 0015-0026
(2018/08/04)
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- SILYLAMINE COMPOUND, COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM CONTAINING THE SAME, AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING THE COMPOSITION
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Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.
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Paragraph 0072; 0073
(2019/04/16)
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- Preparation method of di(diethylamino)silane
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The invention provides a preparation method of di(diethylamino)silane. The method comprises the following steps: step 1, adding an alkane CnH(2n+2) (n>=5) solution of n-butyllithium into a reactor protected by inert atmosphere, dropwise adding diethylamine for a reaction while performing stirring, maintaining the temperature of the reaction system in a range from -60 DEG C to -30 DEG C, and performing stirring for reaction for 10-15 h; step 2, pumping dichlorosilane in at a temperature in a range from -60 DEG C to -30 DEG C, performing stirring for reaction for 15-20 h while maintaining the temperature in a range from -60 DEG C to -30 DEG C, increasing the temperature to a room temperature, and evaporating alkane CnH(2n+2) (n>=5) under a normal pressure; and step 3, performing vacuum distillation to make a coarse di(diethylamino)silane product out. The coarse di(diethylamino)silane product is subjected to vacuum distillation to obtain di(diethylamino)silane with high purity. The preparation method has the beneficial effects that the selected reagents are free of toxicity, thereby ensuring safety of operators; the reaction process is relatively mild and has no potential safety hazard; and the reaction efficiency is very high.
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Paragraph 0019; 0020
(2017/01/02)
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- Method for removing compounds having Si-O bond from aminosilanes
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The present invention relates to a method for eliminating compounds having an Si-O bond from aminosilane. More specifically, the present invention relates to a method for eliminating compounds having an Si-O bond from aminosilane, which comprises the following steps: treating aminosilane including the compounds having Si-O bond as impurities with alkyl metal so as to transform the impurities into a compound showing large difference in the boiling point from aminosilane; and eliminating the impurities through distillation, thereby simplifying a distillation process and increasing yield of aminosilane.
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Paragraph 0029-0030
(2017/06/02)
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- Differences in Reactivity of 1,4-Disilabutane and n-Tetrasilane towards Secondary Amines
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1,4-Disilabutane H3SiCH2CH2SiH3 (1) and n-tetrasilane H3SiSiH2SiH2SiH3 were employed as model systems for the preparation of silicon-rich aminosilanes potentially useful for the deposition of silicon nitride Si3N4. 1 reacts with the appropriate equivalents of diethylamine in an alkane solvent and in the presence of the two-phase catalyst NaNH2/18-crown-6 to give the products (Et2N)2SiHCH2CH2SiH3, (Et2N)2SiHCH2CH2SiH2(NEt2), and (Et2N)2SiHCH2CH2SiH(NEt2)2.By contrast, n-Si4H10 undergoes a cleavage reaction under similar conditions to yield H3SiNEt2 and H2Si(NEt2)2 together with a mixture of polysilanes SinH2n+2, the composition of which is depending on the reaction conditions and the nature of the catalyst (NaH and NaNH2).Diethylaminopolysilanes are also formed, but only in trace quantities.Treatment of n-Si4H10 with pyrrole (C4H5N) leads to the formation of trisilane accompanied by the pyrrolylsilanes H2Si(C4H4N)2, HSi(C4H4N)3, and Si(C4H4N)4.The differences in reactivity suggest excellent leaving group properties of silyl anions in the reaction with amines.
- Schmidbaur, Hubert,Schuh, Heinz
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p. 1679 - 1683
(2007/10/02)
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