- Matrix isolation studies of the reactions of silicon atoms: I. Interaction with water: The infrared spectrum of hydroxysilylene HSiOH
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This study focuses on the interactions and reactions of silicon atoms and molecules with water.Initially, a silicon-water adduct is formed , as noticed from the red shift of the ν2 bending modes of H2O, HDO, and D2O.This silicon hydrate complex rearranges spontaneously through hydrogen tunneling to give HSiOH and HSiOD as final products of the reaction of Si with H2O and HDO.Photolysis of Si:OD2 with λ>=400 nm is necessary for the production of the deuterated insertion product DSiOD.All silicon hydroxy-hydrides undergo a photolytic decomposition reaction when strongly irradiated to give silicon monoxide and molecular hydrogen or two hydrogen atoms.Band assignments fro trans-HSiOH, trans- and cis-HSiOD, and DSiOD have been made.It appears that the cis-isomer converts to the more stable trans-isomer when the matrix is heated.The SiOH bond angle has been calculated for a planar structure of Cs symmetry using the Redlich-Teller product rule and the torsional frequencies for HSiOH, HSiOD, and DSiOD.Normal coordinate analyses have been carried out using the measured frequencies for six isotopomers, namely, HSiOH, HSiOD, DSiOD, HSi18OD, and DSi18OD.Thermodynamic properties have also been for this new species.
- Ismail, Zakya Kafafi,Hauge, Robert H.,Fredin, Leif,Kauffman, James W.,Margrave, John L.
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- Matrix Reactions opf Silan and Oxygen Atoms. Infrared Spectroscopic Evidence for the Silanol, Silanone, and Silanoic and Silicic Acid Molecules
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Matrices formed by the cocondensation of SiH4 and O3 in argon at 17 K were irradiated by a high-pressure mercury arc.Photoproducts include the silicon-oxygen double bond containing species SiO, H2SiO, H(HO)SiO, and (HO)2SiO.HSiOH was prepared in high yield by the reaction of SiH4 with O atoms from the microwave discharge of O2 in excess argon.In both photolysis and discharge experiments, SiH3OH is proposed as a primary reaction product formed by insertion of O atoms an Si-H bond of SiH4.
- Withnall, Robert,Andrews, Lester
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p. 3261 - 3268
(2007/10/02)
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