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different bonding characteristics, while BN is the bonding
similarity of graphite. Starting from a defect point, the sp2
real nature of layered materials is prone to make linear or
planar growth while SiC prefers three-dimensional
growth. SiC nanotubes is considerably unstable in hollow
structure. Our experimental results are in agreement with
the recent ab initio calculations for silicon-rich CNTs [21].
Although the intrinsic energy-modulated growth pro-
posal can explain the different morphologies of solid SiC
nanowires and hollow BN nanotubes, the formation of
the micro-crystals structured SiC nano-bamboos with
larger diameters implies that SiC nanotubes with larger
diameters can be synthesized, although the theoretical
calculations and experiment investigations are still lack.
Very obviously, now shape memory process does take
effect in the formation of SiC nanotubes.
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This work was supported by National Natural
Science Foundation of China (Grant No. 50202007)
and OYF of Hubei Province.
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