Journal of the Electrochemical Society p. 2883 - 2887 (1990)
Update date:2022-08-11
Topics:
Fujino
Nishimoto
Tokumasu
Maeda
Recently, tetraethoxysilane (TEOS) is again attracting attention as one of the organosilicon materials because of the better film quality. We report characteristics of the film deposited by an atmospheric pressure and low-temperature CVD process using TEO
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