2
664
Journal of The Electrochemical Society, 147 (7) 2658-2664 (2000)
S0013-4651(99)06-050-4 CCC: $7.00 © The Electrochemical Society, Inc.
Ab initio theoretical calcuations also predict a strong catalytic effect
Acknowledgments
1
7
for NH on SiO ALD without considering NH Cl salt formation.
3
2
4
This work was supported by the Air Force Office of Scientific
Research. Equipment utilized in this research was provided by earli-
er funding from the Office of Naval Research.
Although the NH Cl may interfere with SiO deposition under
4
2
some reaction conditions, there is no evidence that NH Cl is incor-
4
porated in the SiO CVD films. RBS investigations did not observe
2
The University of Colorado at Boulder assisted in meeting the publica-
tion costs of this article.
any N or Cl contaminants in the SiO films. These RBS results argue
2
that the growth temperatures of 313-333 K were sufficient for com-
plete removal of the NH Cl salt from the SiO surface during the
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