Pl eNa es we dJ oo u nr no at l ao df jCu hs et mm i as tr rgy ins
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mW cm , W = 1 mm, L = 180 μm). The peak in the responsivity
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spectrum (about 4 A W ) of the device is at around 320 nm,
roughly matching that of the UV-Vis absorption spectrum of the
HATP polymeric films. Notably, the whole responsivity curve
does not exactly match the shape of the UV-Vis spectrum,
suggesting that lights of different wavelengths have different
efficiencies in pumping electrons to the trap states.
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Conclusions
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In summary, we synthesized a large-area 2D HATP polymeric
film using Langmuir–Blodgett method and constructed a device
of FET configuration. We systematically studied the
photoelectric properties of the 2D HATP polymeric films. The
device based on thin films of HATP exhibits a broad absorption
spectrum from 200 to 1000 nm and a stable and fast response
to light. This work highlights the opportunity in developing 2D
polymeric organic semiconductors for constructing next
generation electronic devices.
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Conflicts of interest
There are no conflicts to declare.
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25, 6477-6512.
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J. Mahmood, E. K. Lee, M. Jung, D. Shin, H.-J. Choi, J.-M. Seo, S.-
M. Jung, D. Kim, F. Li, M. S. Lah, N. Park, H.-J. Shin, J. H. Oh and
J.-B. Baek, Proc. Natl. Acad. Sci., 2016, 113, 7414-7419.
Acknowledgements
We acknowledge funding support from the National Key R&D 15 (a) G.-H. Nam, K.-S. Kim, S.-H. Park, H.-S. Kim, D.-H. Ahn, J.-H. Kim
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