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SUMMARY
In summary, we report the doping of heterovalent Bi
Journal of the American Chemical Society
Abdelhady, A. L.; Ng, T. K.; Mohammed, O. F.; Ooi, B. S.; Bakr,
O. M. ACS Photonics 2016, 3, 1150-1156.
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Nedelcu, G.; Protesescu, L.; Yakunin, S.; Bodnarchuk,
M. I.; Grotevent, M. J.; Kovalenko, M. V. Nano Lett. 2015, 15,
ions in colloidal CsPbBr3 perovskite NCs by a hot-
injection method to tune their electronic structure. We
probed the effects of Bi doping not only on the band
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635-5640.
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+
(6) Sichert, J. A.; Tong, Y.; Mutz, N.; Vollmer, M.; Fischer,
S.; Milowska, K. Z.; García Cortadella, R.; Nickel, B.; Cardenas-
Daw, C.; Stolarczyk, J. K.; Urban, A. S.; Feldmann, J. Nano Lett.
structure and carrier dynamics of CsPbBr NCs, but also
3
on the interfacial CT with two well-known molecular ac-
ceptors. The fs-TA results clearly show that interfacial CT
in this system can be tuned and facilitated by metal dop-
ing. This is due to the increase in the driving-force Gibbs
free energy (-∆G) between the molecular acceptor and
donor moieties upon metal doping, which leads to more
efficient CT from the NCs to molecular acceptors. This
novel finding provides a tool to precisely control the CT
process at the interface of this promising class of NCs and
paves the way for engineering interfacial charge transfer
in bulk perovskite devices by heterovalent doping.
2
015, 15, 6521-6527.
(7) Huang, H.; Susha, A. S.; Kershaw, S. V.; Hung, T. F.;
Rogach, A. L. Adv. Sci. 2015, 2, 1500194.
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(8)
Zhang, D.; Yu, Y.; Bekenstein, Y.; Wong, A. B.;
Alivisatos, A. P.; Yang, P. J. Am. Chem. Soc. 2016, 138, 13155-13158.
(
9)
Zhang, D.; Yang, Y.; Bekenstein, Y.; Yu, Y.; Gibson, N.
A.; Wong, A. B.; Eaton, S. W.; Kornienko, N.; Kong, Q.; Lai, M.;
Alivisatos, A. P.; Leone, S. R.; Yang, P. J. Am. Chem. Soc. 2016,
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38, 7236-7239.
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(
pellini, A.; Petrozza, A.; Prato, M.; Manna, L. J. Am. Chem. Soc.
2015, 137, 10276-10281.
(11)
Abdelhady, A. L.; Saidaminov, M. I.; Murali, B.; Adinol-
ASSOCIATED CONTENT
Supporting figures S1-S14, table, TEM image, XRD, XPS,
PESA, Absorption and emission spectra.
fi, V.; Voznyy, O.; Katsiev, K.; Alarousu, E.; Comin, R.; Dursun, I.;
Sinatra, L.; Sargent, E. H.; Mohammed, O. F.; Bakr, O. M. J. Phys.
Chem. Lett. 2016, 7, 295-301.
(
12)
Li, J.-J.; Ma, J.-Y.; Ge, Q.-Q.; Hu, J.-S.; Wang, D.; Wan,
AUTHOR INFORMATION
L.-J. ACS Appl. Mater. & Interfaces 2015, 7, 28518-28523.
(
13)
Begum, R.; Chattopadhyay, A. J. Phys. Chem. Lett. 2014,
5
, 126-130.
(14)
Lee, J.-W.; Son, D.-Y.; Ahn, T. K.; Shin, H.-W.; Kim, I.
Y.; Hwang, S.-J.; Ko, M. J.; Sul, S.; Han, H.; Park, N.-G. Sci. Rep.
*
Author Contributions
R.B and M.R. P contributed equally to the work.
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013, 3, 1050.
15) Amit, Y.; Li, Y.; Frenkel, A. I.; Banin, U. ACS Nano 2015,
, 10790-10800.
(16) Amit, Y.; Eshet, H.; Faust, A.; Patllola, A.; Rabani, E.;
Banin, U.; Frenkel, A. I. J. Phys. Chem. C 2013, 117, 13688-13696.
17) Sahu, A.; Kang, M. S.; Kompch, A.; Notthoff, C.; Wills,
(
9
§
Present Addresses
(
A. W.; Deng, D.; Winterer, M.; Frisbie, C. D.; Norris, D. J. Nano
Lett. 2012, 12, 2587-2594.
King Abdullah University of Science and Technology
(
KAUST), KAUST Solar Center, Division of Physical Sci-
(18)
E.; Banin, U. Science 2011, 332, 77-81.
19) Navas, J.; Sanchez-Coronilla, A.; Gallardo, J. J.; Cruz
Mocatta, D.; Cohen, G.; Schattner, J.; Millo, O.; Rabani,
ences and Engineering, Thuwal 23955-6900, Kingdom of
Saudi Arabia.
(
Hernandez, N.; Pinero, J. C.; Alcantara, R.; Fernandez-Lorenzo,
C.; De los Santos, D. M.; Aguilar, T.; Martin-Calleja, J. Nanoscale
ACKNOWLEDGMENT
2015, 7, 6216-6229.
This work was supported by King Abdullah University of
Science and Technology (KAUST). Also, part of this work was
supported by a Saudi Arabia Basic Industries Corporation
(
20) Protesescu, L.; Yakunin, S.; Bodnarchuk, M. I.; Krieg,
F.; Caputo, R.; Hendon, C. H.; Yang, R. X.; Walsh, A.; Kovalenko,
M. V. Nano Lett. 2015, 15, 3692-3696.
(
SABIC) grant RGC/3/2470-01.
(21)
De Roo, J.; Ibanez, M.; Geiregat, P.; Nedelcu, G.;
Walravens, W.; Maes, J.; Martins, J. C.; Van Driessche, I.; Ko-
valenko, M. V.; Hens, Z. ACS Nano 2016, 10, 2071-2081.
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