10.1002/asia.201801408
Chemistry - An Asian Journal
FULL PAPER
OFET device fabrication and measurements
mixture was heated to 80 ℃ and stirred under N2 overnight. After cooled
to r.t. the system was treated by adding water and extraction with
dichloromethane. The combined organic phase was collected. The pure
product was obtained by column chromatography (silica gel, petroleum
ether) and then recrystallized by dichloromethane/methanol as brown
solid (0.40 g, 40 % yield). 1H NMR (300 MHz, CDCl3, 298 K) δ: 8.61 (s,
2H), 8.19 (d, 2H, J = 9 Hz), 8.15 (d, 2H, J = 9 Hz), 8.09 (s, 2H), 7.27 (d,
2H, J = 3 Hz), 7.23 (d, 2H, J = 3 Hz), 7.08 (d, 2H, J = 3 Hz) , 6.73 (d, 2H,
J = 3 Hz), 2.83 (t, 4H, J = 6 Hz), 1.84-1.74 (m, 4H), 1.46-1.31 (m, 20H)
and 0.90 (t, 6H, J = 6 Hz). 13C NMR (75 MHz, CDCl3, 298K) δ: 145.8,
140.8, 139.1, 134.8, 131.4, 129.8, 128.9, 128.8, 128.5, 127.8, 125.7,
125.5, 125.2, 125.0, 123.6, 32.0, 31.8, 30.4, 29.5, 29.4, 29.3, 22.8 and
14.3. MS (MALDI-TOF): m/z calcd. for C48H50S4: 755.17; found: 755.47.
HRMS (ESI): m/z calcd. for C48H50S4: 755.17; found: 755.2831. Element
analysis calcd (%) for C48H50S4: C 76.34,H 6.67; found: C 76.68, H 6.78.
OFET devices in a bottom-gate top-contact (BGTC) configuration were
fabricated in the work. The heavily doped n-typed Si (100) wafers with a
300-nm-thick SiO2 layer with the unit area capacitance of 10.6 nF/cm2
were used as the substrates. The substrates were sequentially cleaned
in an ultrasonic bath of acetone, ethanol and deionized water. After dried
in an oven at 120 ℃ for 20 min, the substrates were treated with UV-
Ozone for 5 min. OTS-treated SiO2 was obtained by immersing the clean
substrates in OTS solution (3 M in toluene) for 2 hours and then
sequentially treated in an ultrasonic bath of toluene, acetone and ethanol.
PS-treated SiO2 was prepared by spin-coating toluene solution of PS (3
mg/mL) on the clean substrate with the speed of 3000 r/min for 30 s and
then annealed at 120 ℃ for 20 min. The thickness of PS layer was about
10 nm. Compounds 1 and 2 were deposited on different dielectric
surfaces by thermal evaporation at r.t. under the pressure of 3−4 × 10-4
Pa with rate of 0.3−0.5 Å s-1. The thickness was controlled by a quartz
oscillating thickness monitor. The thickness of organic semiconductor
layer was about 60 nm. Subsequently, 50-nm-thick gold films as the
source electrode and drain electrode were deposited on the top of the
respective semiconductor layer via shadow mask with rate of 1 Å s-1. The
performance of OFET devices were measured by Keithley 4200
semiconductor parameter analyzer under ambient air. Transfer
characteristics were obtained under a drain voltage of -80 V and a gate
voltage from 10 to -80 V.
Acknowledgements
‡The first two authors contributed equally to this work. This work
was supported by the National Key R&D Program of China
(2017YFA0204704) and the International Exchange Program
under grant No. 21511130059 between the National Natural
Science Foundation of China and the Royal Society of United
Kingdom of Great Britain.
Field effect mobility was calculated in the saturation regime by the
equation:
IDS = (W/2L) μCi(VG-Vth)2
Keywords: semiconductor • aggregation • dielectric surface •
substitution • p-type OFET
Where IDS is the source-drain current, VG is the gate voltage and Vth is the
threshold voltage. Ci, the capacitance per unit area of SiO2 layer, is 10.6
nF cm-2. The channel’s width (W) and length (L) are 1500 and 100 um,
respectively.
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(silica
gel,
petroleum
ether)
and
then
recrystallized
by
dichloromethane/methanol as yellow solid (0.60 g, 73 % yield). 1H NMR
(300 MHz, CDCl3, 298 K) δ: 8.57 (s, 2H), 8.18-8.07 (m, 6H), 7.18 (d, 2H,
J = 3 Hz), 6.90 (d, 2H, J = 3 Hz), 2.92 (t, 4H, J = 6 Hz), 1.84-1.74 (m, 4H),
1.46-1.31 (m, 20H) and 0.90 (t, 6H, J = 6 Hz). 13C NMR (75 MHz, CDCl3,
298K) δ: 147.3, 139.9, 131.2, 130.5, 128.9, 128.6, 127.8, 127.7, 125.7,
125.5, 125.0, 124.6, 32.1, 31.9, 30.5, 30.0, 29.5, 29.4, 22.8 and 14.3. MS
(MALDI-TOF): m/z calcd. for C40H46S2: 590.93; found: 590.65. HRMS
(ESI): m/z calcd. for C40H46S2 [M+H]+: 591.17; found: 591.3118. Element
analysis calcd (%) for C40H46S2 : C 81.30, H 7.85; found: C 81.31, H 8.03.
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