mobilities both for holes and electrons and high PL efficiency
1
21, 10829; (e) O. Gidron, Y. Diskin-Posner and M. Bendikov,
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9
in the single crystal form.
In conclusion, we demonstrated that 4 with a furan–furan
2
011, 47, 1976; (g) L. Huo, Y. Huang, B. Fan, X. Guo, Y. Jing,
junction is a versatile organic semiconductor with a p-type
hole-transporting) character for OFET, OPV, and OLET
M. Zhang, Y. Li and J. Hou, Chem. Commun., 2012, 48, 3318;
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M. Mamada, J.-i. Nishida, D. Kumaki, S. Tokito and
(
applications. Although furan-based organic semiconductors
have been so far less studied in comparison to thiophene- or
pyrrole-based ones, the present results indicate that furan-
based materials may have a great potential as versatile organic
semiconductors, in particular, their distinct photophysical
properties in the solid state from those of the thiophene
counterparts can make a new material class applicable to
OPVs and OLETs. Developments of materials with fused-
furan substructures are now ongoing in our research group.
This work was financially supported by Grants-in-Aid for
Scientific Research (No. 23245041) from MEXT, Japan, The
Strategic Promotion of Innovative Research and Development
from the Japan Science and Technology Agency, and a
Founding Program for World-Leading R&D on Science and
Technology (FIRST), Japan.
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This journal is c The Royal Society of Chemistry 2012