24330 J. Phys. Chem. B, Vol. 109, No. 51, 2005
Wang et al.
(5) Li, Y.; Meng, G. W.; Zhang, L. D.; Phillip, F. Appl. Phys. Lett.
2000, 76, 2011.
(6) Wu, Y. Y.; Yang, P. D. AdV. Mater. 2001, 13, 520.
(7) Zong, R. L.; Zhou, J.; Li, Q.; Du, B.; Li, B.; Fu, M.; Qi, X. W.; Li,
L. T.; Buddhudu, S. J. Phys. Chem. B 2004, 108, 16713.
(8) Li, H.; Pederiva, F.; Wang, B. L.; Wang, J. L.; Wang, G. H. Appl.
Phys. Lett. 2005, 86, 011913.
increasing length of nanowires, the nanowires will keep their
original growth direction because of the two-dimensional
nucleation layer-by-layer growth mode.26,27
Conclusion
In summary, we have successfully prepared Ni nanowire
arrays by the direct current electrodeposition in the holes of
PAAM templates with different diameters. The growth orienta-
tion of Ni nanowires greatly depends on the diameter of PAAM
templates. When the diameter is less than 70 nm the preferential
orientation of Ni nanowires is along the [110] direction, whereas
nanowires will grow along the [111] direction when the diameter
is larger than 90 nm. The interface energy minimum principle
determines the Ni nanowire growth direction. We think the
ability to prepare preferential orientation of nanowires should
open up new opportunities for fundamental studies and nano-
structure applications.
(9) Zhang, J. X.; Zhang, L. D.; Ye, C. H.; Chang, M.; Yan, Y. G.; Lu,
Q. F. Chem. Phys. Lett. 2004, 400, 158.
(10) Wang, X. F.; Zhang, J.; Shi, H. Z.; Wang, Y. W.; Meng, G. W.;
Peng, X. S.; Zhang, L. D. J. Appl. Phys. 2001, 89, 3847.
(11) Vazquez, M.; Pirota, K.; Hernandez-Velez, M.; Pride, V. M.; Navas,
D.; Sanz, R.; Batallan, F.; Velazquez, J. J. Appl. Phys. 2004, 95, 6642.
(12) Li, C.; Zhang, D. H.; Han, S.; Liu, X. L.; Tang, T.; Zhou, C. W.
AdV. Mater. 2003, 15, 143.
(13) Gudiksen, M. S.; Wang, J. F.; Lieber, C. M. J. Phys. Chem. B
2002, 106, 4036.
(14) Wang, R. P.; Xu, G.; Jin, P. Phys. ReV. B 2004, 69, 113303.
(15) Wu, Y.; Cui, Y.; Huynh, L.; Barrelet, C. J.; Bell, D. C.; Lieber, C.
M. Nano Lett. 2004, 4, 433.
(16) Abel, S.; Freimuth, H.; Lehr, H.; Mensinger, H. J. Micromech.
Microeng. 1994, 4, 47.
(17) Rahman, I. Z.; Razzeeb, K. M.; Rahman, M. A.; Kamruzzaman,
M. J. Magn. Magn. Mater. 2003, 262, 166.
(18) Pan, H.; Liu, B. H.; Yi, J. B.; Poh, C.; Lim, S. H.; Ding, J.; Feng,
Y. P.; Huan, C. H. A.; Lin, J. Y. J. Phys. Chem. B 2005, 109, 3049.
(19) Masuda, H.; Fukuda, K.; Science 1995, 268, 1466.
(20) Sander, M. S.; Gronsky, R.; Sands, T.; Stacy, A. M. Chem. Mater.
2003, 15, 335.
(21) Jin, C. G.; Jiang, G. W.; Liu, W. F.; Cai, W. L.; Yao, L. Z.; Yao,
Z.; Li, X. G. J. Mater. Chem. 2003, 13, 1743.
(22) Tian, M. L.; Wang, J. G.; Kurtz, J.; Mallouk, T. E.; Chan, M. H.
W. Nano Lett. 2003, 3, 919.
(23) Pan, H.; Sun, H.; Poh, C.; Feng, Y.; Lin, J. Nanotechnology 2005,
Acknowledgment. The financial support from the National
Natural Science Foundation (No.19974052, 50172048, 10374090
and 10274085), Ministry of Science and Technology of China
(No.2005CB623603), Hundred Talent Program of Chinese
Academy of Sciences and Talent Foundation of Anhui Province
(2002Z020) is gratefully acknowledged.
References and Notes
16, 1559.
(1) Gudiksen, M. S.; Lauhon, L. J.; Wang, J.; Smith, D. C.; Lieber, C.
M. Nature 2002, 415, 617.
(24) Holam, M.; O’Keefe, T. J. Miner. Eng. 2000, 13, 193.
(25) Whitney, T. M.; Jiang, J. S.; Searson, P. C.; Chien, C. L. Science
1993, 261, 1316.
(2) Sun, S.; Murray, C. B.; Weller, D.; Folks, L.; Moser, A. Science
2000, 287, 1989.
(3) Kin, S. W.; Kim, M.; Lee, W. Y.; Hyeon, T. J. Am. Chem. Soc.
2002, 124, 7642.
(4) Lee, S. B.; Mitchell, D. T.; Trofin, L.; Navanen, T. K.; Soderlund,
H.; Martin, C. R. Science 2002, 296, 2198.
(26) Moller, F. A.; Kintrup, J.; Lachenwitzer, A.; Magnussen, O. M.;
Behm, R. J. Phys. ReV. B 1997, 56, 12506.
(27) Lachenwitzer, A.; Magnussen, O. M. J. Phys. Chem. B 2000, 104,
7424.