C.M. Hangarter et al. / Electrochimica Acta 56 (2011) 5561–5565
5565
nanowires behaved differently than their solid nanowire counter-
parts. The anomalous MR behavior was attributed to geometry
induced MR transpiring from domain wall formation within the
ferromagnetic shell. Further investigation of magneto-transport
properties and configurations of domain walls are required to sup-
port future developments in magnetic sensors, spintronics, and
magnetic random access memory.
Acknowledgment
This material is based on research sponsored by the Defense
Microelectronics Activity (DMEA) under agreement number
DOD/DMEA-CNN H94003-06-20604. The United States govern-
ment is authorized to reproduce and distribute reprints for
government purposes, not withstanding any copyright notation
thereon.
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Fig. 5. Schematic representation of magnetization states of ferromagnetic shells:
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