278
A. Ghahremaninezhad, A. Dolati / Journal of Alloys and Compounds 480 (2009) 275–278
rent. TEM studies showed hemispherical head for nanowires during
the growth process. This growth behavior supports the fact that
the growth in central section of nanowires is more rapid than the
outer layer of nanowires. Furthermore, regarding TEM studies it was
concluded that hemispherical head of nanowires is not completely
pack. In other words, nanowires consist of two distinct sections out
of which the first one is the body of the nanowire with dense struc-
ture and the second one is the hemispherical growing head of the
nanowire with unpacked structure. It was shown that for the volt-
ages more than 17 V ac, the electrochemical reactions are restricted
by mass transport (diffusion-controlled growth). The nanowires
composition was changed directly by changing ions concentration
in solution. The fabricated nanowires are very dense with smooth
wall and possess a HCP dominant structure and high Hc and Mr/Ms
values.
[9] H.R. Khan, K. Petrikowski, Mater. Sci. Eng. C 19 (2002) 345.
[10] H. Zhu, S. Yang, G. Ni, D. Yu, Y. Du, Scripta mater. 44 (2001) 2291.
[11] Q.F. Liu, C.X. Gao, J.J. Xiao, D.S. Xue, J. Magn. Magn. Mater. 260 (2003) 151.
[12] S. Sun, C.B. Murray, D. Weller, et al., Science 287 (2000) 1989.
[13] L. Sun, P.C. Searson, Appl. Phys. Lett. 74 (1999) 2803.
[14] Q. Huang, D. Davis, E.J. Podlaha, J. Appl. Electrochem. 36 (2006) 871.
[15] S.Z. Chu, K. Wada, S. Inoue, S. Todoroki, Electrochim. Acta 48 (2003) 3147.
[16] H. Masuda, K. Yada, A. Osaka, Jpn. J. Appl. Phys. 37 (1998) 1340.
[17] H. Masuda, F. Hasegawa, J. Electrochem. Soc. 144 (1997) 127.
[18] H. Masuda, H. Yamada, M. Satoh, H. Asoh, Appl. Phys. Lett. 71 (1997) 2770.
[19] O. Jessensky, F. Muller, U. Gosele, Appl. Phys. Lett. 72 (1998) 1173.
[20] M. Ghorbani, F. Nasirpouri, A. Iraji zad, A. Saedi, Mater. Design 27 (2006) 983.
[21] G. Sharma, M.V. Pishko, C.A. Grimes, Thin Solid Films 515 (2007) 3315.
[22] A. Jagminiene, G. Valincius, A. Riaukaite, A. Jagminas, J. Crys. Growth 274 (2005)
622.
[23] M. Motoyama, Y. Fukunaka, T. Sakka, Y.H. Ogata, Electrochim. Acta 53 (2007)
205.
[24] M. Motoyama, Y. Fukunaka, T. Sakka, Y.H. Ogata, S. Kikuchi, J. Electroanal. Chem.
584 (2005) 84.
[25] Y. Konishi, M. Motoyama, H. Matsushima, Y. Fukunaka, R. Ishii, Y. Ito, J. Elec-
troanal. Chem. 559 (2003) 149.
[26] S. Valizadeh, J.M. George, P. Leisner, L. Hultman, Electrochim. Acta 47 (2001)
865.
References
[27] I.U. Schuchert, M.E. Toimil Molares, D. Dobrev, J. Vetter, R. Neumann, M. Martin,
J. Electrochem. Soc. 150 (2003) C189.
[28] M.E. Toimil Molares, V. Buschmann, D. Dobrev, R. Neumann, R. Scholz, I.U.
Schuchert, J. Vetter, Adv. Mater. 13 (2001) 62.
[29] P.M. Paulus, F. Luis, M. Kroll, G. Schmid, L.J. de Jongh, J. Magn. Magn. Mater. 224
(2001) 180.
[30] H. Daimon, O. Knakami, O. Iangoya, A. Sakemoto, Jpn. J. Appl. Phys. 132 (1991)
282.
[1] A. Dolati, M. Sababi, E. Nouri, M. Ghorbani, Mater. Chem. Phys. 102 (2007) 118.
[2] A. Dolati, S.S. Mahshid, Mater. Chem. Phys. 108 (2008) 391.
[3] E. Goamez, J. Ramirez, E. Valleas, J. Appl. Electrochem. 28 (1998) 71.
[4] S.Z. Chu, S. Inoue, K. Wada, K. Kurashima, Electrochim. Acta 51 (2005) 820.
[5] J. Xu, Y. Xu, Appl. Surf. Sci. 253 (2007) 7203.
[6] J. Xu, Y. Xu, Mater. Lett. 60 (2006) 2069.
[7] J. Xu, X. Huang, G. Xie, Y. Fang, D. Liu, Mater. Res. Bull. 39 (2004) 811.
[8] A. Saedi, M. Ghorbani, Mater. Chem. Phys. 91 (2005) 417.