(1995)
Update date:2022-08-16
Topics:
Warren, O. L.
Anderson, G. W.
Hanf, M. C.
Griffiths, K.
Norton, P. R.
We have determined the optimum geometry of the S-passivated InP(100)-(1x1) surface by dynamical low-energy electron-diffraction analysis. S atoms bond to In by occupying the bridge site that continues the zinc-blendestacking sequence of the substrate. Oth
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