H-Y. Lee et al.: Real-time x-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates
strain energy [i.e., (100)] occurs after the film thickness
exceeds a certain critical value. This result is also con-
sistent with the observation in our previous work that a
change from the (100)-oriented texture to the (110)-
preferred orientation occurred in the deposition of LNO
films when altering the deposition process from sputter-
ing to laser ablation deposition, in which a lower strain
energy would be induced due to its lower energy of bom-
bardment compared to that of sputtering during the depo-
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1
1
37
sition process.
1
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IV. SUMMARY
13. K.M. Satyakahmi, R.M. Mallha, K.V. Ramanathan, X.D. Wu,
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In summary, (100)-oriented LNO film was grown on a
Si substrate by the rf sputtering technique. Real-time
x-ray reflectivity and diffraction measurements under
in situ sputtering deposition conditions were performed
to study the growth behavior of LNO thin films on Si
substrate. We found that an amorphous layer of 60 Å was
grown in the first 6 min of the deposition and subse-
quently a polycrystalline overlayer grew as observed
from the in situ x-ray reflectivity curves and diffraction
patterns. Nucleation and growth take place on the amor-
phous layer with random orientation and then the poly-
crystalline columnar textures of (100) and (110) were
grown on the top of this random orientation layer. Fi-
nally, the preferred (100) textural structure grew on the
top of LNO films. By comparing the integrated intensi-
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increasing film thickness beyond a certain critical value.
1
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(
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ACKNOWLEDGMENTS
The authors appreciate the hospitality of Dr. B. Ocko
and technical help from Ms. J. Wang and Mr. S. Coburn
at beamline X22A. This research was supported by the
National Science Council of the Republic of China under
the Contract No. NSC88-2216-E213-001. The NSLS is
supported by the U.S. Department of Energy.
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