Aluminum nitride (AlN)

Base Information

• Chemical Name: Aluminum nitride (AlN)
• CAS No.: 24304-00-5
• Deprecated CAS: 11132-80-2,12252-59-4,1302-38-1,165390-88-5,37342-40-8,633293-26-2,1192824-18-2,121833-95-2,2056109-59-0,2089022-99-9,1192824-18-2,121833-95-2,12252-59-4,1302-38-1,165390-88-5,37342-40-8,633293-26-2
• Molecular Formula: AlN
• Molecular Weight: 46.0279
• Hs Code.: 28500090
• European Community (EC) Number: 246-140-8
• UNII: 7K47D7P3M0
• DSSTox Substance ID: DTXSID8066977
• Wikipedia: Aluminium nitride
• Wikidata: Q414445
• Mol file: 24304-00-5.mol

Synonyms:Aluminumnitride (8CI);21RAlN;A 100S;A 100WR;A 200 (nitride);A 500FXWR;AGN 1 (nitride);AN 215;AS 10 (nitride);AlN 2;Alnel A 100;Aluminum mononitride;Denka AN Plate;FAN-F 05;FAN-F 30;FAN-f 30A-TY;FAN-f 50J-A;FAN-f 80;FLA;GP 1000;HR 10;JC;MAN 20;R 15;R 15 (nitride);R15S;SCAN 70;SH 02SW10 Type I;SH 15;SH 30;Shapal E;Shapal SH 04;Shapal SH 15;Shapal SH 30;Toyalnite FLA;Toyalnite FLD;Toyalnite FLG;Toyalnite FLX;Toyalnite FS;Toyalnite Super FL;Toyalnite UC;Toyalnite US;UM 53E9;UMS;WR 100;XUR-YM 2002-97923;XUS35548;XUS 35560;XUS 35569;Aluminum nitride;

Chemical Property of Aluminum nitride (AlN)

Chemical Property:

• Appearance/Colour: sheet or powder
• Vapor Pressure: 0Pa at 25℃
• Melting Point: >2200 °C(lit.)
• Boiling Point: 2517oC
• PSA: 23.79000
• Density: 3.26 g/mL at 25 °C(lit.)
• LogP: 0.24008
• Solubility.: Soluble in mineral acids.
• Water Solubility.: MAY DECOMPOSE
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 1
• Rotatable Bond Count: 0
• Exact Mass: 40.9846124
• Heavy Atom Count: 2
• Complexity: 10

Purity/Quality:

99.9% ^*data from raw suppliers

Aluminum nitride, agglomerated powder ^*data from reagent suppliers

Safty Information:

• Pictogram(s): Xi
• Hazard Codes: Xi:Irritant
• Statements: R36/37/38:
• Safety Statements: S26:; S37/39:

MSDS Files:

SDS file from LookChem

Total 1 MSDS from other Authors

Useful:

• Chemical Classes: Metals -> Metals, Inorganic Compounds
• Canonical SMILES: N#[Al]
• Physical Properties: White crystalline solid, hexagonal; odor of ammonia in moist air; sublimes at 2000°C; melts in N2 atmosphere over 2200°C; decomposes in water, alkalies and acids. Aluminum Nitride (AlN) is an ideal material for many semiconductor equipment and applications. With high resistance and low porosity, CoorsTek AlN outperforms other materials in process environments such as halogen gases and RF plasma. Aluminum nitride is a high–thermal conductivity ceramic used as an electronic substrate. Also a key component in the production of sialons.
• Uses: Aluminum nitride (AIN) is an important III-V group semiconductor material, which has aroused great attention due to many outstanding features including high thermal conductivity (~320 Wm10^ -1 K^-1), high electrical resistance (>10^10 Ωcm), low dielectric constant (8.6), wide band gap (6.2eV), and low thermal expansion coefficient (4.2x 10-6°C)-1 match to both Si and GaN semiconductors. AIl these properties make AIN an excellent candidate for use in electronic, light, and field- emission devices. Aluminum nitride advantages High heat dissipation with thermal conductivity of 170 W/m K Non-toxic alternative to BeO Thermal expansion coefficient similar to Si, GaN, and GaAs semiconductors High dielectric strength. Aluminum nitride possesses very high thermal conductivity and effectively used in the ceramic industry. It finds application in deep ultraviolet optoelectronics, steel production, dielectric layers in optical storage media, chip carriers and as a crucible to grow crystals of gallium arsenide. It is also used as a radio frequency filter, which finds application in mobile phones. Further, it is used as a circuit carrier in semiconductors. In addition to this, it is used as a heat-sink in light-emitting diode lighting technology. Aluminum nitride is a refractory ceramic that is used as an electrically insulating material in applications similar to aluminum oxide. AlN is also used in optical and semiconductor devices with GaN to produce LEDs on sapphire and in piezoelectric MEMS devices. In semiconductor electronics; in steel manufacture. AlN components and substrates are used in electrical engines, microelectronics, naval radio and defense systems, railway transport systems, telecommunications and research satellites, and emission control systems.

Technology Process of Aluminum nitride (AlN)

There total 5 articles about Aluminum nitride (AlN) which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield:

silicon carbide + nitrogen (7727-37-9) + aluminium (7429-90-5) → aluminum nitride (24304-00-5)

Guidance literature:

With AgCl₂; In neat (no solvent); N2, heating rate 5°C/min, 600 ->900°C;

Reference yield:

nitrogen (7727-37-9) + aluminium (7429-90-5) → aluminum nitride (24304-00-5)

Guidance literature:

In gaseous matrix; byproducts: NH2, AlO; laser vaporization (Nd:YAG, 355 nm) of Al, addn. of a mixt. of N2 in Ar, supersonic expansion;

DOI:10.1016/0009-2614(91)85021-N

Reference yield:

nitrogen(II) oxide (10102-43-9) + aluminium (7429-90-5) → aluminum nitride (24304-00-5)

Guidance literature:

In gaseous matrix; byproducts: NH2, AlO; laser vaporization (Nd:YAG, 355 nm) of Al, addn. of a mixt. of NO in Ar, supersonic expansion;

DOI:10.1016/0009-2614(91)85021-N

upstream raw materials:

nitrogen

aluminium

nitrogen(II) oxide

ammonia

Refernces

• 1、 Ebben, Maarten,Meulen, J. J. ter. "". . p. 229 - 234. Retrieved 1991.
• 2、 Shin, Jason,Ahn, Do-Hwan,Shin, Mee-Shik,Kim, Yong-Seog. "Self-propagating high-temperature synthesis of aluminum under lower nitrogen pressures". . p. 1021 - 1028. Retrieved 2008/10/08.