Germanium

Base Information

• Chemical Name: Germanium
• CAS No.: 7440-56-4
• Deprecated CAS: 129827-75-4
• Molecular Formula: Ge
• Molecular Weight: 74.6059
• European Community (EC) Number: 231-164-3
• UNII: 619P6J82AE,00072J7XWS
• DSSTox Substance ID: DTXSID8052483,DTXSID7052521,DTXSID30422913,DTXSID901318637
• Wikipedia: Germanium
• Wikidata: Q867,Q27113865,Q27113859
• NCI Thesaurus Code: C95170
• Mol file: 7440-56-4.mol

Synonyms:Germanium

Chemical Property of Germanium

Chemical Property:

• Appearance/Colour: greyish-white lustrous brittle solid
• Melting Point: 937 ºC
• Boiling Point: 2830 ºC
• PSA: 0.00000
• Density: 5.35 g/cm³
• LogP: 0.06920
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 0
• Rotatable Bond Count: 0
• Exact Mass: 73.9211778
• Heavy Atom Count: 1
• Complexity: 0

Purity/Quality:

99.9% ^*data from raw suppliers

Safty Information:

• Pictogram(s): Xi；F
• Hazard Codes: F:Flammable;;
• Statements: R11:; R36/38:
• Safety Statements: S2:; S26:

MSDS Files:

SDS file from LookChem

Total 1 MSDS from other Authors

Useful:

• Chemical Classes: Metals -> Metalloid Compounds (Germanium)
• Canonical SMILES: [Ge]
• Recent EU Clinical Trials: A phase 3b, open-label, multi-country, multi-centre, long-term follow-up study of ZOSTER-049 (follow-up of ZOSTER-006/022 studies) to assess the prophylactic efficacy, safety and persistence of immune response of a Herpes Zoster subunit vaccine and assessment of persistence of immune response and safety of 1 or 2 additional doses administered in ZOSTER-049 in 2 subgroups of older adults

Technology Process of Germanium

There total 176 articles about Germanium which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield: 99.0%

germane (7782-65-2) → germanium (7440-56-4) + hydrogen (1333-74-0)

Guidance literature:

germane introducing to evac. reaction vessel (clean or with walls coatedbeforehand by layer of germanium powder) to pressure 0.6-3.0 at, decomp n. initiation by spark discharge, germanium powder deposition on reaction vessel walls; monitoring by pressure meas? powder melting in high vac. resistancefurnace; mass spectrometric anal.;

Reference yield:

germanium tetraiodide (13450-95-8) + mercury(II) chloride (51312-24-4) → germanium (7440-56-4) + germanium(II) iodide + germaniumtetrachloride (10038-98-9)

Guidance literature:

yielding a mixture of GeCl4, GeI4, GeI2, Ge and Hg halides;;

Reference yield:

germanium tetraiodide (13450-95-8) + tin(ll) chloride → germanium (7440-56-4) + germanium(II) iodide + germaniumtetrachloride (10038-98-9)

Guidance literature:

yielding a mixture of GeCl4, GeI4, GeI2, Ge and Sn halides;;

upstream raw materials:

germane

3,4-dimethyl-1,1-dichlorogermacyclopent-3-ene

phenylgermane

chromium

Downstream raw materials:

dibromogermylene

germanium tetrabromide

germanium tetraiodide

dimethyldiiodogermane

Refernces

• 1、 Langdo,Leitz,Currie,Fitzgerald,Lochtefeld,Antoniadis. "High quality Ge on Si by epitaxial necking". . p. 3700 - 3702. Retrieved 2000.
• 2、 Eres, Djula,Sharp, J. W.. "". . p. 2764 - 2766. Retrieved 1992.
• 3、 Carim, Azhar I.,Collins, Sean M.,Foley, Justin M.,Maldonado, Stephen. "Benchtop electrochemical liquid-liquid-solid growth of nanostructured crystalline germanium". . p. 13292 - 13295. Retrieved 2011.
• 4、 Dellas,Minassian,Redwing,Mohney. "Formation of nickel germanide contacts to Ge nanowires". . . Retrieved 2010.
• 5、 Dennis, L. M.,Work, R. W.. "". . p. 4486 - 4489. Retrieved 1933.
• 6、 Kamins,Briggs,Williams, R. Stanley. "Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001)". . p. 1862 - 1864. Retrieved 1998.
• 7、 Miguez,Fornes,Meseguer,Marquez,Lopez. "Low-temperature synthesis of Ge nanocrystals in zeolite Y". . p. 2347 - 2349. Retrieved 1996.
• 8、 Chen,Lu,Xu,Meng,Hu,Sun,Shlimak. "Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO 2 films using Ge-ion implantation and neutron irradiation methods". . . Retrieved 2011.
• 9、 Bock, R.,Hackstein, K. G.. "". . p. 339 - 357. Retrieved 1953.
• 10、 Palange,Capellini,Di Gaspare,Evangelisti. "Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100)". . p. 2982 - 2984. Retrieved 1996.