1,10-Phenanthrolinedisulfonic acid, 4,7-diphenyl-, disodium salt

Base Information

• Chemical Name: 1,10-Phenanthrolinedisulfonic acid, 4,7-diphenyl-, disodium salt
• CAS No.: 53744-42-6
• Molecular Formula: C24H16 N2 O6 S2 . 2 Na
• Molecular Weight: 554.512
• Hs Code.: 2915291000
• European Community (EC) Number: 258-740-7
• DSSTox Substance ID: DTXSID801336016
• Nikkaji Number: J9.719E
• Wikidata: Q27147660
• Mol file: 53744-42-6.mol

Synonyms:4,7-diphenylphenanthroline sulfonate;bathophenanthroline sulfonate

Chemical Property of 1,10-Phenanthrolinedisulfonic acid, 4,7-diphenyl-, disodium salt

Chemical Property:

• Melting Point: 300 °C
• Boiling Point: °Cat760mmHg
• Flash Point: °C
• PSA: 156.94000
• Density: g/cm³
• LogP: 6.08680
• Storage Temp.: 2-8°C
• Solubility.: H2O: soluble
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 8
• Rotatable Bond Count: 2
• Exact Mass: 536.00886708
• Heavy Atom Count: 36
• Complexity: 812

Purity/Quality:

98%,99%, ^*data from raw suppliers

Bathophenanthrolinedisulfonic Acid Disodium Salt Hydrate[for Determination of Ferrous Ion] ^*data from reagent suppliers

Safty Information:

• Pictogram(s): Xi
• Hazard Codes: Xi,C
• Statements: 36/38-36/37/38-36-52/53-35-67
• Safety Statements: 26-36-24/25-37/39-61-45-36/37/39

MSDS Files:

SDS file from LookChem

Useful:

• Canonical SMILES: C1=CC(=CC=C1C2=C3C=CC4=C(C=CN=C4C3=NC=C2)C5=CC=C(C=C5)S(=O)(=O)[O-])S(=O)(=O)[O-].[Na+].[Na+]
• Uses: Used for pretreatment of planar silicon devices when plating with Nickel plating solution products 44069 and 44070. Use of Buffer HF improved:Buffer HF improved dissolves silica films (both thermally grown and silane SiO2) produced on the surfaces of silicon and exposed by photolithography. It also is capable of dissolving doped silica films such as phosphosilica and borosilica glasses as formed in semiconductor processing. The overall chemical reaction is: 4HF + SiO2 SiF4 + 2H2OFor trouble-free operation Buffer HF improved is recommended in the new technologies for manufacture of semiconductor planar and mesa devices. It is compatible with both negative and positive photoresists. Excellent results with good reproducibility are simple to achieve without undercutting marked oxides, surface staining or device degradation by metallic impurities. Use of Buffer HF improved:Buffer HF improved dissolves silica films (both thermally grown and silane SiO2) produced on the surfaces of silicon and exposed by photolithography. It also is capable of dissolving doped silica films such as phosphosilica and borosilica glasses as formed in semiconductor processing. The overall chemical reaction is: 4HF + SiO2 SiF4 + 2H2OFor trouble-free operation Buffer HF improved is recommended in the new technologies for manufacture of semiconductor planar and mesa devices. It is compatible with both negative and positive photoresists. Excellent results with good reproducibility are simple to achieve without undercutting marked oxides, surface staining or device degradation by metallic impurities.