CID 10154018

Base Information

• Chemical Name: CID 10154018
• CAS No.: 12039-83-7
• Molecular Formula: Si₂Ti
• Molecular Weight: 104.051
• Mol file: 12039-83-7.mol

Synonyms:

Chemical Property of CID 10154018

Chemical Property:

• Melting Point: 1540°C
• Boiling Point: 1540°C
• PSA: 0.00000
• Density: 4,39 g/cm³
• LogP: -0.76160
• Water Solubility.: Soluble in hydrofluoric acid. Insoluble in water.
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 0
• Rotatable Bond Count: 0
• Exact Mass: 103.9017937
• Heavy Atom Count: 3
• Complexity: 0

Purity/Quality:

98%,99%, ^*data from raw suppliers

Titanium silicide ^*data from reagent suppliers

Safty Information:

• Pictogram(s):  
• Hazard Codes: 

MSDS Files:

SDS file from LookChem

Useful:

• Canonical SMILES: [Si].[Si].[Ti]
• Uses: Titanium silicide is used in the semiconductor industry. It is also used in the fabrication of transistors. In special alloy applications, as a flame or blast impingement-resistant coating material.

Technology Process of CID 10154018

There total 39 articles about CID 10154018 which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield:

titanium tetrachloride (7550-45-0) + monosilane (7440-21-3) → titanium disilicide (12039-83-7) + silicon (7440-21-3)

Guidance literature:

With H₂; In neat (no solvent); byproducts: HCl, H2; cold wall reactor, dild. mixt. of TiCl4 and SiH4 (1% in H2, total pressure: 2 Torr), deposition on (001)-Si wafer (patterned in parallel stripes, alternative SiO2 and Si, heated by fast switching lamp, T=800 or 900 °C), deposition time: 1 min; not isolated, detected by Auger electron spectroscopy, Rutherford backscattering profiling;

DOI:10.1063/1.102306

Reference yield:

titanium nitride + silicon nitride → pentatitanium trisilicide + titanium disilicide (12039-83-7) + silicon (7440-21-3)

Guidance literature:

In neat (no solvent); react. of Si3N4 and TiN at 1940 K in He atm. for 20 min; identified by X-ray diffraction;

DOI:10.1016/0040-6031(85)85145-5

Reference yield:

titanium oxide (12137-20-1) + silicon (7440-21-3) → titanium monosilicide + pentatitanium trisilicide + titanium disilicide (12039-83-7) + titanium silicide + silica gel (112926-00-8,7631-86-9)

Guidance literature:

milling for 1 h, heating at 1500°C (1 h, vac.); further products; detd. by X-ray diffraction;

upstream raw materials:

titanium

silicon

titanium oxide

pyrographite

Downstream raw materials:

silicon ion

SiCl⁽¹⁺⁾

titanium⁽¹⁺⁾

Refernces

• 1、 Lakiza, Sergei N.. "". . p. 577 - 580. Retrieved 1985.
• 2、 Tang, Qiang,Liu, Xian,Kamins, Theodore I.,Solomon, Glenn S.,Harris, James S.. "Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy". . p. 2451 - 2453. Retrieved 2002.
• 3、 Tam,Cao,Nyborg. "XRD and XPS characterisation of transition metal silicide thin films". . p. 329 - 336. Retrieved 2012.
• 4、 Thomas,Madar,Senateur,Laborde. "CRYSTAL GROWTH, CHARACTERIZATION AND RESISTIVITY MEASUREMENTS OF TiSi2 SINGLE CRYSTALS.". . p. 175 - 182. Retrieved 1987.
• 5、 Iiderem,Reif. "Optimized deposition parameters for low pressure chemical vapor deposited titanium silicide". . p. 2590 - 2596. Retrieved 1988.
• 6、 Hashimoto, Hitoshi,Sun, Zheng Ming,Inoue, Yosuke,Tada, Shuji. "Synthesis of Ti3SiC2 from powder blend of Ti, Si and TiC". . p. 263 - 267. Retrieved 2006.
• 7、 Ilderem,Reif. "Investigation of the effects of very low pressure chemical vapor deposited TiSi2 on device electrical characteristics". . p. 2989 - 2993. Retrieved 1989.
• 8、 Harper, J. M. E.,Motakef, S.,Moy, D.. "". . p. 1196 - 1198. Retrieved 1992.
• 9、 Arunajatesan,Carim. "Synthesis of titanium silicon carbide". . p. 667 - 672. Retrieved 1995.
• 10、 Suh, Dongwoo,Kim, Hong Seung,Kang, Jin-Yeong. "Effect of interfacial silicon on the structural stability of C54-TiSi2 on SiO2". . p. 3697 - 3699. Retrieved 2000.