COBALT SILICIDE

Base Information

• Chemical Name: COBALT SILICIDE
• CAS No.: 12017-12-8
• Molecular Formula: CoSi₂
• Molecular Weight: 115.164
• Mol file: 12017-12-8.mol

Synonyms:Cobaltdisilicide

Chemical Property of COBALT SILICIDE

Chemical Property:

• Melting Point: 1277°C
• PSA: 0.00000
• Density: 5.30
• LogP: -0.76160
• Water Solubility.: Insoluble in water.

Purity/Quality:

98%,99%, ^*data from raw suppliers

Cobalt silicide, 99% (metals basis) ^*data from reagent suppliers

Safty Information:

• Pictogram(s):  
• Hazard Codes: 

MSDS Files:

SDS file from LookChem

Useful:

• Uses: Cobalt silicide is widely used in chemical research. It is also used for the production and characterization of very-large-scale integration (VLSI) applications in semiconductors.

Technology Process of COBALT SILICIDE

There total 14 articles about COBALT SILICIDE which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield:

cobalt(II,III) oxide + silicon → cobalt(II) oxide (1307-96-6) + cobalt disilicide (12017-12-8) + cobalt (7440-48-4)

Guidance literature:

cobalt(II,III) oxide; silicon; In neat (no solvent); for 0.5h; Milling;

With reduced graphene oxide; In neat (no solvent); for 0.333333h; Milling;

In neat (no solvent); at 800 ℃; for 3h; Reagent/catalyst; Inert atmosphere;

DOI:10.1016/j.jallcom.2017.07.119

Reference yield:

cobalt(II,III) oxide + silicon → cobalt(II) oxide (1307-96-6) + cobalt disilicide (12017-12-8)

Guidance literature:

cobalt(II,III) oxide; silicon; In neat (no solvent); for 0.5h; Milling;

In neat (no solvent); at 800 ℃; for 3h; Reagent/catalyst; Inert atmosphere;

DOI:10.1016/j.jallcom.2017.07.119

Reference yield:

cobalt (7440-48-4) + silicon (7440-21-3) → cobalt disilicide (12017-12-8)

Guidance literature:

In neat (no solvent); film of Co sputter deposited on CVD deposited polycrystalline Si film, annealed in forming gas; XRD;

DOI:10.1149/1.1811592

upstream raw materials:

cobalt

silicon

cobalt(II)

iron

Refernces

• 1、 Lee,Wolga. "Growth kinetics of Mo, W, Ti, and Co silicides formed by infrared laser heating". . p. 684 - 690. Retrieved 1990.
• 2、 Moshfegh,Hashemifar,Akhavan. "The growth of CoSi2 thin film in Co/W/Si(100) multilayer structures". . p. 239 - 244. Retrieved 2003.
• 3、 Pong,Chang,Mayanovic,Ho,Lin,Ko,Tseng,Chen,Hiraya,Watanabe. "X-ray-absorption spectroscopy of CoSi2". . p. 16510 - 16515. Retrieved 1996.
• 4、 Liu, Feng-Ming,Ren, Bin,Jiang, Yu-Xiong,Ye, Jian-Hui,Tian, Zhong-Qun. "Influence of annealing ambience on the formation of cobalt silicides". . p. 15 - 21. Retrieved 2003.
• 5、 Deweerd,Moons,Verheyden,Milants,Langouche,Pattyn. "A combined Moessbauer and Rutherford backscattering spectroscopy analysis of the influence of nanosized cavities on CoSi2 formation". . p. 3584 - 3586. Retrieved 1996.
• 6、 Yew,Tseng,Chen,Nakamura,Chang. "Formation of self-aligned CoSi2 on selective epitaxial growth silicon layer on (001)Si inside 0.1-0.6 μm oxide openings prepared by electron beam lithography". . p. 3692 - 3694. Retrieved 1996.
• 7、 Kvon,Kim, Kijoon,Kim, Nam,Lee, Hu Jong,Budantsev,Baklanov. "Quantum transport in ultrathin CoSi2 polycrystalline films". . p. 147 - 150. Retrieved 1997.
• 8、 Takeuchi, S.,Hashimoto, T.,Shibuya, T.. "". . . Retrieved 1992.
• 9、 Li, F.,Lustig, N.,Klosowski, P.,Lannin, J. S.. "". . . Retrieved 1990.
• 10、 Weijs, P. J. W.,Leuken, H. van,Groot, R. A. de,Fuggle, J. C.,Reiter, S.,et al.. "". . . Retrieved 1991.