CID 14574682

Base Information

• Chemical Name: CID 14574682
• CAS No.: 12014-85-6
• Molecular Formula: CeSi₂
• Molecular Weight: 196.291
• Mol file: 12014-85-6.mol

Synonyms:BLHYVSKDMXEWHD-UHFFFAOYSA-N

Chemical Property of CID 14574682

Chemical Property:

• Melting Point: 1620°C
• Boiling Point: °Cat760mmHg
• Flash Point: °C
• PSA: 0.00000
• Density: g/cm³
• LogP: -1.83240
• Water Solubility.: Insoluble in water.
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 0
• Rotatable Bond Count: 0
• Exact Mass: 195.85930
• Heavy Atom Count: 3
• Complexity: 0

Purity/Quality:

98%,99%, ^*data from raw suppliers

CERIUM SILICIDE 95.00% ^*data from reagent suppliers

Safty Information:

• Pictogram(s):  
• Hazard Codes: 

MSDS Files:

SDS file from LookChem

Useful:

• Canonical SMILES: [Si].[Si].[Ce]
• Uses: Cerium silicide is used as a surrogate material to investigate the feasibility of high-energy ball milling and Spark Plasma Sintering (SPS) for the production of uranium silicide.

Technology Process of CID 14574682

There total 5 articles about CID 14574682 which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield:

cerium(IV) oxide + silicon (7440-21-3) → cerium disilicide (12014-85-6) + silica gel (112926-00-8,7631-86-9)

Guidance literature:

In neat (no solvent); heating in an electric furnace;;

Reference yield:

cerium (7440-45-1) + silicon (7440-21-3) → cerium disilicide (12014-85-6)

Guidance literature:

In melt; Electric Arc; bulk pieces of Ce and Si arc melted several times; remelted in Hukin-type cold crucible; cast from rf levitated melt; single crystals grown by rf floating zone method (250 kHz, 30 kW); detd.by X-ray diffraction;

Reference yield:

cerium (7440-45-1) + silicon (7440-21-3) → CeSi2, tetragonal (12014-85-6)

Guidance literature:

In melt; Electric Arc; stoich. mixt. melted; XRD;

DOI:10.1016/S0925-8388(02)00409-7

upstream raw materials:

cerium

silicon

Refernces

• 1、 Cheng,Tang,Liu. "Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation". . p. 240 - 245. Retrieved 2004.
• 2、 Hill, P.,Willis, Frank,Ali, Naushad. "". . . Retrieved 1992.
• 3、 Thompson, R. D.,Tsaur, B. Y.,Tu, K. N.. "". . p. 535 - 537. Retrieved 1981.
• 4、 Bulanova,Zheltov,Meleshevich,Saltykov,Effenberg. "Cerium-silicon system". . p. 110 - 115. Retrieved 2002.
• 5、 Malterre, D.,Grioni, M.,Weibel, P.,Dardel, B.,Baer, Y.. "". . . Retrieved 1993.
• 6、 Murashita, Y.,Sakurai, J.,Satoh, T.. "Crystal instability in CeSix". . p. 789 - 792. Retrieved 1991.
• 7、 Lawrence, J. M.,Allen, J. W.,Oh, S.-J.,Lindau, I.. "". . . Retrieved 1982.