Germanium nitride

Base Information

• Chemical Name: Germanium nitride
• CAS No.: 12065-36-0
• Molecular Formula: Ge3N4
• Molecular Weight: 273.95
• Wikidata: Q4321613
• Wikipedia: Germanium_nitride
• Mol file: 12065-36-0.mol

Synonyms:Germanium nitride;12065-36-0;Germanium Tetranitride;Germanium(III) nitride;Germanium nitride (Ge3N4);BIXHRBFZLLFBFL-UHFFFAOYSA-N;MFCD00016118;Q4321613;Germanium(III) nitride, >=99.99% trace metals basis

Chemical Property of Germanium nitride

Chemical Property:

• Melting Point: >850 °C (dec.)(lit.)
• PSA: 74.61000
• Density: 5.35 g/mL at 25 °C(lit.)
• LogP: -0.74086
• Water Solubility.: insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10]
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 4
• Rotatable Bond Count: 0
• Exact Mass: 271.779798
• Heavy Atom Count: 7
• Complexity: 151

Purity/Quality:

98%,99%, ^*data from raw suppliers

Germanium(III) nitride ≥99.99% trace metals basis ^*data from reagent suppliers

Safty Information:

• Hazard Codes: Xi
• Statements: 36/37/38
• Safety Statements: 26-36

MSDS Files:

SDS file from LookChem

Total 1 MSDS from other Authors

Useful:

• Canonical SMILES: N#[Ge]N([Ge]#N)[Ge]#N
• Description: Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3