12019-92-0Relevant articles and documents
121Sb MOESSBAUER INVESTIGATION OF THE RARE EARTH ANTIMONIDES.
Holbourn,Woodhams
, p. 186 - 194 (1981)
**1**2**1Sb Moessbauer spectra have been obtained for the series R Sb (R equals La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, and Yb) at 78 K and for a selection of the compounds at 5. 5 K. At 78 K all the spectra show a single line. The isomer shifts are close to that of InSb and show a linear increase with increasing atomic number of the rare earth ion. Many of the rare earth antimonides exhibit a variety of magnetic and structural phase transitions at a sufficiently low temperature. Spectra obtained at 5. 5 K are interpreted in terms of these phase transitions.
The isothermal section of the Dy-Fe-Sb ternary system at 773 K
Liu, Jingqi,Zong, Bo,Yang, Xiaomao,Cui, Xuehong,Su, Kunpeng,Wang, Xina,Li, Junqin
, p. 103 - 106 (2009)
The isothermal section of the Dy-Fe-Sb ternary system at 773 K has been investigated mainly by X-ray powder diffraction in this work. The existence of eight binary compounds and one ternary compound were conformed in this system. The section consists of t
Synthesis, crystal structure, and electronic properties of the tetragonal (REIREII)3SbO3 Phases (RE I = La, Ce; REII = Dy, Ho)
Forbes, Scott,Wang, Peng,Yao, Jinlei,Kolodiazhnyi, Taras,Mozharivskyj, Yurij
, p. 1025 - 1031 (2013)
In our efforts to tune the charge transport properties of the recently discovered RE3SbO3 phases (RE is a rare earth), we have prepared mixed (REIREII)3SbO3 phases (REI = La, Ce; REII = Dy, Ho) via high-temperature reactions at 1550 C or greater. In contrast to monoclinic RE3SbO 3, the new phases adopt the P42/mnm symmetry but have a structural framework similar to that of RE3SbO3. The formation of the tetragonal (REIREII)3SbO 3 phases is driven by the ordering of the large and small RE atoms on different atomic sites. The La1.5Dy1.5SbO3, La1.5Ho1.5SbO3, and Ce1.5Ho 1.5SbO3 samples were subjected to elemental microprobe analysis to verify their compositions and to electrical resistivity measurements to evaluate their thermoelectric potential. The electrical resistivity data indicate the presence of a band gap, which is supported by electronic structure calculations.
Synthesis and Transport Properties of the Family of Zintl Phases Ca3RESb3(RE = La-Nd, Sm, Gd-Tm, Lu): Exploring the Roles of Crystallographic Disorder and Core 4f Electrons for Enhancing Thermoelectric Performance
Ogunbunmi, Michael O.,Baranets, Sviatoslav,Bobev, Svilen
, p. 9382 - 9392 (2021/12/13)
Zintl phases with complex crystal structures have been studied as promising candidate materials for thermoelectric (TE) applications. Here, we report the syntheses of the family of rare-earth metal Zintl phases with the general formula Ca4-xRExSb3 (x ≈ 1; RE = La-Nd, Sm, Gd-Tm, Lu). The structural elucidation is based on refinements of single-crystal X-ray diffraction data for 12 unique chemical compositions. The cubic structure is confirmed as belonging to the anti-Th3P4 structure type (space group I4ˉ 3d, no. 220, Z = 4), where the Ca and RE atoms share the same atomic site with ca. 75 and 25% occupancies, respectively. Such crystallographic disordering of divalent Ca and trivalent RE atoms in the structure provides a pathway to intricate bonding. The latter, together with the presence of heavy elements such as Sb and the lanthanides, are expected to enhance the scattering probability of phonons, thereby leading to low thermal conductivity κ comparable to that of the ordered RE4Sb3. The drive of the hypothetical parent compound Ca4Sb3 to be stabilized by alloying with rare-earth metals can be understood following the Zintl-Klemm concept, as the resultant formula may be rationalized as (Ca2+)3RE3+(Sb3-)3, indicating the realization of closed-shell electronic configurations for all elements. This notion is confirmed by electronic structure calculations, which reveal narrow bandgaps Eg = 0.77 and 0.53 eV for Ca3LaSb3 and Ca3LuSb3, respectively. In addition, the incorporation of RE atoms into the structure drives the phase into a state of a degenerate semiconductor with dominant hole charge carriers.
