12162-21-9 Usage
Description
Hafnium Selenide (HfSe2) is a chemical compound composed of hafnium and selenium elements. It is characterized by its dark brown color and hexagonal crystal structure with lattice parameters a=0.375 nm and b=0.616 nm. HfSe2 has a resistivity of 20μohm·cm and is available in a fine powder form with a mesh size of -325 and particle size of 10μm or less, ensuring a high purity level of 99.5%.
Uses
Used in Electronics Industry:
Hafnium Selenide is used as a semiconductor material for its unique electronic properties. The compound's resistivity and hexagonal structure make it suitable for applications in the development of electronic devices and components, where its specific characteristics can be exploited to enhance performance.
Used in Optoelectronics:
Hafnium Selenide is utilized as a material in optoelectronic devices due to its potential for light absorption and emission. Its properties can be harnessed to create advanced optical components, such as photodetectors and light-emitting diodes (LEDs), which can be used in various applications, including communication and sensing technologies.
Used in Thin Film Technology:
HfSe2 is employed as a material in thin film technology, where its high purity and fine particle size make it an ideal candidate for depositing thin layers on various substrates. These thin films can be used in a range of applications, from improving the performance of electronic devices to enhancing the efficiency of solar cells.
Used in Research and Development:
Hafnium Selenide is also used in research and development settings, where its unique properties are investigated for potential applications in new and emerging technologies. Scientists and engineers are exploring its use in areas such as superconductivity, thermoelectric materials, and advanced energy storage solutions.
Check Digit Verification of cas no
The CAS Registry Mumber 12162-21-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,1,6 and 2 respectively; the second part has 2 digits, 2 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 12162-21:
(7*1)+(6*2)+(5*1)+(4*6)+(3*2)+(2*2)+(1*1)=59
59 % 10 = 9
So 12162-21-9 is a valid CAS Registry Number.
InChI:InChI=1/Hf.2Se/rHfSe2/c2-1-3
12162-21-9Relevant articles and documents
Insights on the Synthesis, Crystal and Electronic Structures, and Optical and Thermoelectric Properties of Sr1- xSbxHfSe3 Orthorhombic Perovskite
Moroz, Nicholas A.,Bauer, Christopher,Williams, Logan,Olvera, Alan,Casamento, Joseph,Page, Alexander A.,Bailey, Trevor P.,Weiland, Ashley,Stoyko, Stanislav S.,Kioupakis, Emmanouil,Uher, Ctirad,Aitken, Jennifer A.,Poudeu, Pierre F. P.
, p. 7402 - 7411 (2018)
Single-phase polycrystalline powders of Sr1-xSbxHfSe3 (x = 0, 0.005, 0.01), a new member of the chalcogenide perovskites, were synthesized using a combination of high temperature solid-state reaction and mechanical alloying approaches. Structural analysis using single-crystal as well as powder X-ray diffraction revealed that the synthesized materials are isostructural with SrZrSe3, crystallizing in the orthorhombic space group Pnma (#62) with lattice parameters a = 8.901(2) ? b = 3.943(1) ? c = 14.480(3) ? and Z = 4 for the x = 0 composition. Thermal conductivity data of SrHfSe3 revealed low values ranging from 0.9 to 1.3 W m-1 K-1 from 300 to 700 K, which is further lowered to 0.77 W m-1 K-1 by doping with 1 mol % Sb for Sr. Electronic property measurements indicate that the compound is quite insulating with an electrical conductivity of 2.9 S/cm at 873 K, which was improved to 6.7 S/cm by 0.5 mol % Sb doping. Thermopower data revealed that SrHfSe3 is a p-type semiconductor with thermopower values reaching a maximum of 287 μV/K at 873 K for the 1.0 mol % Sb sample. The optical band gap of Sr1-xSbxHfSe3 samples, as determined by density functional theory calculations and the diffuse reflectance method, is ～1.00 eV and increases with Sb concentration to 1.15 eV. Careful analysis of the partial densities of states (PDOS) indicates that the band gap in SrHfSe3 is essentially determined by the Se-4p and Hf-5d orbitals with little to no contribution from Sr atoms. Typically, band edges of p- and d-character are a good indication of potentially strong absorption coefficient due to the high density of states of the localized p and d orbitals. This points to potential application of SrHfSe3 as absorbing layer in photovoltaic devices.
Bayliss, S. C.,Liang, W. Y.
, (1982)
