12401-56-8 Usage
Description
Hafnium Silicide, also known as Hafnium Monosilicide, is a compound formed by the combination of hafnium and silicon. It is a gray powder with a rhombic crystal structure, characterized by lattice parameters a=0.3677nm, b=1.455nm, and c=0.3649nm. Hafnium Silicide exhibits a hardness of 930 kgf/mm2 and is available as a 99.5% pure material. It is known for its high melting point, high thermal stability, and excellent electrical conductivity.
Uses
Used in Electronics Industry:
Hafnium Silicide is used as an ohmic contact material for semiconductor devices, providing a low-resistance electrical path between the metal and semiconductor layers. This property makes it suitable for applications such as transistors and diodes.
Used in Semiconductor Industry:
Hafnium Silicide serves as a Schottky barrier contact, which is a crucial component in various electronic devices, including solar cells and diodes. It forms a rectifying contact between a metal and a semiconductor, allowing for efficient charge transport and improved device performance.
Used in Integrated Circuits:
Hafnium Silicide is employed as a gate electrode material in integrated circuits, offering improved electrical conductivity and thermal stability. This enhances the performance and reliability of the devices, making them suitable for high-speed and high-power applications.
Used in Microelectronics:
Hafnium Silicide is used as a local interconnect material in microelectronics, providing a low-resistance connection between various components on a chip. This helps in reducing the overall resistance and improving the signal integrity in the circuit.
Used in High-Temperature Thermoelectric Materials:
Hafnium Silicide has been identified as a promising high-temperature thermoelectric material, with potential applications in waste heat recovery and power generation systems. Its high thermal stability and electrical conductivity make it an attractive candidate for these applications.
Used in Ceramic Materials:
Hafnium Silicide is used as a powder in ceramic materials, where it imparts wear resistance and semiconducting properties to the final product. This makes it suitable for applications in harsh environments, such as aerospace and automotive industries, where high-temperature and wear-resistant materials are required.
Used in Diffusion Barriers:
Hafnium Silicide is employed as a diffusion barrier material in semiconductor devices, preventing the intermixing of different materials and maintaining the integrity of the device structure. This is crucial for ensuring the long-term performance and reliability of the devices.
Check Digit Verification of cas no
The CAS Registry Mumber 12401-56-8 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,4,0 and 1 respectively; the second part has 2 digits, 5 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 12401-56:
(7*1)+(6*2)+(5*4)+(4*0)+(3*1)+(2*5)+(1*6)=58
58 % 10 = 8
So 12401-56-8 is a valid CAS Registry Number.
InChI:InChI=1/Hf.S2/c;1-2/rHfS2/c1-3-2
12401-56-8Relevant articles and documents
Hafnium silicide formation on Si(001)
Johnson-Steigelman,Brinck,Parihar,Lyman
, (2004)
The solid-state reaction of thick (～50 nm) and thin (～monolayer) films of Hf with cleaned and oxidized Si(001) substrates was investigated. Upon annealing to 1000 °C, films of HfSi2 were formed after reaction times that depended upon the surfac
