1303-00-0 Usage
Description
Gallium Arsenide (GaAs) is a dark gray crystalline solid with a metallic greenish-blue sheen or gray powder. It is an intermetallic compound composed of 48.2% gallium and 51.8% arsenic. GaAs is known for its high-speed applications, operating at high frequencies with low power consumption and high sensitivity. It is also electroluminescent in infrared light and has various physical and chemical properties that make it suitable for a range of applications.
Uses
1. Semiconductor Applications:
Gallium Arsenide is used as a semiconductor material in the production of transistors, solar cells, and lasers. It is a widely used intermetallic semiconductor component due to its high electron mobility and energy gap at room temperature.
Used in Electronics Industry:
GaAs is used as a high-speed semiconductor material for transistors, solar cells, and lasers, benefiting from its high-frequency operation, low power consumption, and high sensitivity.
2. Light-Emitting Diodes (LEDs) and Photovoltaic Cells:
Gallium Arsenide is used in the manufacturing of LEDs and photovoltaic cells due to its electroluminescent properties in infrared light.
Used in Optoelectronics Industry:
GaAs is used as a material for LEDs and photovoltaic cells, taking advantage of its infrared electroluminescence.
3. Dental Amalgam:
Gallium alloys are used as a low toxicity replacement for mercury in dental amalgam.
Used in Dental Industry:
GaAs is used as a component in dental amalgam, providing a low toxicity alternative to mercury.
4. Telephone Equipment and Other Electronic Devices:
Gallium Arsenide is used in the development of telephone equipment and other electronic devices, leveraging its high-speed and infrared electroluminescent properties.
Used in Telecommunication Industry:
GaAs is used as a component in telephone equipment, benefiting from its high-speed and infrared electroluminescent properties.
Used in Electronics Industry (General):
GaAs is also used in various electronic devices, taking advantage of its high-speed and infrared electroluminescent properties.
5. Research and Development:
Gallium Arsenide's potential for high-speed applications and improvements in silicon technology have led to ongoing research and development in the field.
Used in Research and Development:
GaAs is used as a material for exploring high-speed applications and improving the cost-effectiveness of its development in comparison to silicon technology.
Preparation
Gallium arsenide is prepared by passing a mixture of arsenic vapor and hydrogen over gallium(III) oxide heated at 600°C: Ga2O3 + 2As + 3H2 2GaAs + 3H2OThe molten material attacks quartz. Therefore, quartz boats coated with carbon by pyrolytic decomposition of methane should be used in refining the compound to obtain high purity material. Gallium arsenide is produced in polycrystalline form as high purity, single crystals for electronic applications. It is produced as ingots or alloys, combined with indium arsenide or gallium phosphide, for semiconductor applications.
Air & Water Reactions
Stable in dry air. Tarnishes in moist air. Insoluble in water.
Reactivity Profile
GALLIUM ARSENIDE can react with steam, acids and acid fumes. Reacts with bases with evolution of hydrogen. Attacked by cold concentrated hydrochloric acid. Readily attacked by the halogens. The molten form attacks quartz.
Hazard
Toxic metal. Questionable carcinogen
Fire Hazard
Flash point data for GALLIUM ARSENIDE are not available; however, GALLIUM ARSENIDE is probably combustible.
Flammability and Explosibility
Nonflammable
Safety Profile
Confirmed carcinogen.
Mddly toxic by intraperitoneal route. Most
arsenic compounds are poisons. Can react
with steam, acids, and acid fumes to evolve
the deadly poisonous arsine. Molten gallium
arsenide attacks quartz. When heated to
decomposition it emits very toxic fumes of
As. See also ARSENIC COMPOUNDS and
GALLIUM COMPOUNDS.
Carcinogenicity
Carcinogenesis. Gallium is antineoplastic in several
human and murine cancer cell lines and in some in vivo
cancers. It has been used experimentally in patients in the
treatment of lymphatic malignancies (including multiple
myelomas) and for urothelial malignancies. However,
the dissociation of gallium arsenide into gallium and arsenic
is a factor to take into account. A considerable number of
studies have evaluated the carcinogenic potential of arsenic
and various arsenic compounds.
Check Digit Verification of cas no
The CAS Registry Mumber 1303-00-0 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 1,3,0 and 3 respectively; the second part has 2 digits, 0 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 1303-00:
(6*1)+(5*3)+(4*0)+(3*3)+(2*0)+(1*0)=30
30 % 10 = 0
So 1303-00-0 is a valid CAS Registry Number.
InChI:InChI=1/As.Ga/q-3;+3
1303-00-0Relevant articles and documents
Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom
-
, (2008/06/13)
A novel gallium arsenide precursor has the formula R2 GaAs(SiR')2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20° C. to 60° C., preferably at room temperature, under water free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions.
