13465-71-9Relevant articles and documents
Etching silicon with HF-HNO3-H2SO4/H 2O mixtures- unprecedented formation of trifluorosilane, hexafluorodisiloxane, and Si-F surface groups
Lippold, Marcus,Boehme, Uwe,Gondek, Christoph,Kronstein, Martin,Patzig-Klein, Sebastian,Weser, Martin,Kroke, Edwin
, p. 5714 - 5721 (2013/02/25)
The etching behaviour of sulfuric-acid-containing HF-HNO3 solutions towards crystalline silicon surfaces has been studied over a wide range of H2SO4 concentrations. For mixtures with low sulfuric acid concentration, NO2/N2O4, N 2O3, NO and N2O have been detected by means of FTIR spectroscopy. Increasing concentrations of nitric acid lead to high etching rates and to an enhanced formation of NO2/N2O 4. Different products were observed for the etching of silicon with sulfuric-acid-rich mixtures [c(H2SO4) > 13 mol L -1]. Trifluorosilane and hexafluorodisiloxane were identified by FTIR spectroscopy as additional reaction products. In contrast to the commonly accepted wet chemical etching mechanism, the formation of trifluorosilane is not accompanied by the formation of molecular hydrogen (according to Raman spectroscopy). Thermodynamic calculations and direct reactions of F 3SiH with the etching solution support an intermediate oxidation of trifluorosilane and the formation of hexafluorodisiloxane. The etched silicon surfaces were investigated by diffuse reflection FTIR and X-ray photoelectron spectroscopy (XPS). Surprisingly, no SiH terminations were observed after etching in sulfuric-acid-rich mixtures. Instead, a fluorine-terminated surface was found.
Selective and sequential reduction of polyhalosilanes with alkyltin hydrides
D'Errico, John J.,Sharp, Kenneth G.
, p. 2177 - 2180 (2008/10/08)
The reactions between alkyltin hydrides and a variety of polyhalo- and mixed halosilanes have been investigated. For SiCl4 and SiCl3H, the reductions proceed in a stepwise manner to yield the monoreduced species as the major products. The reduction of SiBr4 occurs much faster to yield a mixture of SiBr3H and SiH4, or, in the vapor phase, SiBr3H as the sole product. SiF3X (X = Br, Cl) is converted into SiF3H, with no further reduction of SiF3H observed upon addition of a second equivalent of alkyltin hydride. SiF2HX compounds (X = Br, Cl) are obtained from SiF2X2 and are converted into SiF2H2 with excess Me3SnH. Redistribution becomes competitive with reduction in reactions between Me3SnH and SiFBr3, leading to mixtures of SiH4, SiF2H2, and SiF3H. The major products in the reaction between SiCl2Br2 and Me3SnH are SiCl3H and SiH4 (no SiCl2H2 was observed). Several probable intermediates were independently synthesized and allowed to react with Me3SnH. Together with deuterium labeling experiments, these reactions shed light on the mechanisms involved in these systems. In particular, the reactions appear not to proceed via free radicals.
