13760-02-6

Basic information

• Product Name: DIIODOSILANE
• Synonyms: DIIODOSILANE;SiH2I2
• CAS NO: 13760-02-6
• Molecular Formula: H₂I₂Si
• Molecular Weight: 283.91
• Product Categories: Protecting and Derivatizing Reagents;Protection and Derivatization;Silicon-Based
• Mol File: 13760-02-6.mol
• Article Data: 3

Chemical Properties

• Melting Point: -1°C
• Boiling Point: 56-60 °C25 mm Hg(lit.)
• Flash Point: 101 °F
• Appearance: /colorless liquid
• Density: 2.834 g/mL at 25 °C(lit.)
• Storage Temp.: Refrigerator (+4°C)
• CAS DataBase Reference: DIIODOSILANE(CAS DataBase Reference)
• NIST Chemistry Reference: DIIODOSILANE(13760-02-6)
• EPA Substance Registry System: DIIODOSILANE(13760-02-6)

Safety Data

• Hazard Codes: C
• Statements: 10-14-20/21/22-34
• Safety Statements: 16-26-27-28-36/37/39-45
• RIDADR: UN 3129 4.3/PG 1
• WGK Germany: 3
• TSCA: No
• HazardClass: 3.2
• PackingGroup: III
• Hazardous Substances Data: 13760-02-6(Hazardous Substances Data)

Usage

Chemical Properties

Clear liquid

Uses

Reagent involved in reductive iodination for synthesis of [18F]FDOPA

InChI:InChI=1/I2Si/c1-3-2

Synthetic route

Dichlorosilane (4109-96-0) + lithium iodide → diiodosilane (13760-02-6)

Conditions	Yield
In pentane at -70 - 35℃; for 16h; Temperature; Solvent; Inert atmosphere; Large scale;	77%
at 40℃; under 1277.21 - 2311.54 Torr; for 0.08h; Temperature;	45.3 g

phosphorous (12185-10-3) + iodosilane (13598-42-0) → diiodosilane (13760-02-6) + P(SiH3)I2 (128166-50-7) + monosilane (7440-21-3)

Conditions	Yield
In neat (no solvent) byproducts: H2; heating in evacuated, sealed tube to 100°C;;

phosphorus (12185-10-3) + iodosilane (13598-42-0) → diiodosilane (13760-02-6) + P(SiH3)I2 (128166-50-7) + monosilane (7440-21-3)

Conditions	Yield
byproducts: H2; at 100°C;

phosphorus (12185-10-3) + iodosilane (13598-42-0) → diiodosilane (13760-02-6) + Si2H4 + P(SiH3)4I + phosphan (7803-51-2)

Conditions	Yield
byproducts: H2; at 20°C;	A <1 B n/a C n/a D n/a

hydrogen iodide (10034-85-2) + monosilane (7440-21-3) → diiodosilane (13760-02-6) + triiodo silane (13465-72-0) + silicon tetraiodide (13465-84-4) + iodosilane (13598-42-0)

Conditions	Yield
aluminium(III) iodide In neat (no solvent) reaction at 80°C and 500 Torr;; fractional distillation and condensation;;
aluminium(III) iodide In neat (no solvent) reaction at 80°C and 500 Torr;; fractional distillation and condensation;;

diphenylsilane (775-12-2) + hydrogen iodide (10034-85-2) → diiodosilane (13760-02-6)

Conditions	Yield
In not given according to Fritz, G., Kummer D., Chem. Ber., 94 (1961) p. 1143; at -40°C;

Dichlorosilane (4109-96-0) + lithium iodide → diiodosilane (13760-02-6) + SiH2ClI (21479-74-3)

Conditions	Yield
In toluene at 20 - 29℃; for 18h; Temperature; Solvent;

diiodosilane (13760-02-6) + bis(trifluoromethylseleno)mercury (870-61-1) → bis(trifluoromethylseleno)silane (69641-88-9)

Conditions	Yield
In decalin stirring, 20°C, 1 h;	78%

diiodosilane (13760-02-6) + 2S-benzyloxymethyl-4R-acetoxy-1,3 dioxolane + 2S-benzyloxymethyl-4S acetoxy-1,3 dioxolane (154459-77-5) → 2S-Benzyloxymethyl-4R-iodo-1,3-dioxolane + 2S-benzyloxymethyl-4S-iodo-1,3 dioxolane (299412-06-9)

Conditions	Yield
In dichloromethane; toluene

diiodosilane (13760-02-6) + mercury → mercury(I) iodide

Conditions	Yield
In neat (no solvent) byproducts: SiH4, Si2H6, H2; at ambient temp.;;
In neat (no solvent) byproducts: SiH4, Si2H6, H2; at ambient temp.;;

diiodosilane (13760-02-6) + mercury monofluoride → difluorosilane (13824-36-7)

Conditions	Yield
In neat (no solvent)	0%

diiodosilane (13760-02-6) + silver fluoride → difluorosilane (13824-36-7)

Conditions	Yield
In neat (no solvent)	0%

diiodosilane (13760-02-6) + silver(I) selenide → disilyl selenide (14939-45-8)

Conditions	Yield
In benzene under Ar; H2SiI2 is added to a slurry of Ag2Se in benzene, refluxed for5 d; filtd., the filtrate is distd.;

diiodosilane (13760-02-6) + sodium tetracarbonyl cobaltate (14878-28-5) → H2Si(Co(CO)4)2

Conditions	Yield
In diethyl ether excess of Na(Co(CO)4), -23°C;

diiodosilane (13760-02-6) + mercury(II) selenide → (H2SiSe)3 (291-57-6)

Conditions	Yield
In benzene HgSe, benzene and H2SiI2 are condensed into a tube at -196°C, warmed to room temp., heated to 120°C, filtd. under inert gas, benzene is evapd., the residue is warmed to 40°C, benzene is added, evacuated, warmed (40°C, 24 h); cooled to -10°C, elem. anal.;

Upstream product

• 12185-10-3 phosphorous 
• 13598-42-0 iodosilane 
• 4109-96-0 Dichlorosilane 
• 10377-51-2 lithium iodide 
• 775-12-2 diphenylsilane 
• 10034-85-2 hydrogen iodide 
• 7440-21-3 monosilane 
• 12185-10-3 phosphorus 

Downstream Products

• 14939-45-8 disilyl selenide 

Related news

Gas phase structure of DIIODOSILANE (cas 13760-02-6) SiH 2 I 209/26/2019

The molecular structure of diiodosilane has been determined by gas electron diffraction. Assuming C 2 v symmetry, only the S-I bond length (2.423(3)Å) and the I-Si-I bond angle (110.8(4) o ) could be determined accurately in this experiment. The experimental geometric paramet...detailed

Synthesis of monolithic 3D ordered macroporous carbon/nano-silicon composites by DIIODOSILANE (cas 13760-02-6) decomposition09/25/2019

Monolithic carbon/nano-silicon composites with a three-dimensionally ordered macroporous (3DOM) structure were synthesized via a nanocasting route using a macro- and mesoporous silica monolith as a hard template for carbon with similar hierarchical porosity, followed by chemical vapor deposition...detailed

Relevant articles and documents

Gas phase structure of diiodosilane SiH2I2

The molecular structure of diiodosilane has been determined by gas electron diffraction. Assuming C2v symmetry, only the S-I bond length (2.423(3) ?) and the I-Si-I bond angle (110.8(4)°) could be determined accurately in this experiment. The experimental geometric parameters and vibrational frequencies which were reported earlier are compared to calculated values derived with the HF approximation and DFT methods (B3LYP and SVWN) using 3-21G* basis sets and effective core potentials.

PREPARATION OF SI-H CONTAINING IODOSILANES VIA HALIDE EXCHANGE REACTION

Methods of synthesizing Si-H containing iodosilanes, such as diidosilane or pentaiododisilane, using a halide exchange reaction are disclosed.