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1379534-49-2

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1379534-49-2 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1379534-49-2 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,3,7,9,5,3 and 4 respectively; the second part has 2 digits, 4 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 1379534-49:
(9*1)+(8*3)+(7*7)+(6*9)+(5*5)+(4*3)+(3*4)+(2*4)+(1*9)=202
202 % 10 = 2
So 1379534-49-2 is a valid CAS Registry Number.

1379534-49-2Relevant articles and documents

Synthesis and characterization of new thermally stable poly(naphthodithiophene) derivatives and applications for high-performance organic thin film transistors

Hwang, Moon Chan,Jang, Jae-Wan,An, Tae Kyu,Park, Chan Eon,Kim, Yun-Hi,Kwon, Soon-Ki

, p. 4520 - 4528 (2012/08/27)

A series of new p-type polymers, PNDT-T and PNDT-TT, with enforced coplanar structure for effective χ-electron delocalization, having naphtho[2,1-b:3,4-b′]dithiophene and thiophenes as main core units, were successfully synthesized by Stille coupling reaction. The naphtho[2,1-b:3,4- b′]dithiophene unit of the polymer main chain enhances charge carrier mobility by extending χ-conjugation length and rigidly enforced coplanar structure. Both polymers, PNDT-T and PNDT-TT, have high thermal stability up to 250 °C with a high Tg of 402 °C. On the basis of AFM and XRD results, it was found that PNDT-TT showed relatively more highly ordered intermolecular structures than did PNDT-T, with thiophene unit and high field-effect mobility, because the bithiophene unit provides crystallinity with increasing planarity and enough space for interdigitation of the long alkyl side chains for high order. These new p-type polymers PNDT-T and PNDT-TT exhibit high carrier mobilities of 0.01 and 0.076 cm2/(V s) and on/off ratios of 4 × 105 and 7 × 106, respectively. The above results indicate that the plate structure with a sulfur-containing fully aromatic system, which has the upper direction extended, could enhance the thermal stability and charge transport characteristics for OTFT applications.

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