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1645-83-6

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1645-83-6 Usage

Flammability and Explosibility

Nonflammable

Check Digit Verification of cas no

The CAS Registry Mumber 1645-83-6 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 1,6,4 and 5 respectively; the second part has 2 digits, 8 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 1645-83:
(6*1)+(5*6)+(4*4)+(3*5)+(2*8)+(1*3)=86
86 % 10 = 6
So 1645-83-6 is a valid CAS Registry Number.
InChI:InChI=1/C3H2F4/c4-2-1-3(5,6)7/h1-2H

1645-83-6SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name 1,3,3,3-TETRAFLUOROPROP-1-ENE

1.2 Other means of identification

Product number -
Other names 1,3,3,3-tetrafluoro-1-propene

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:1645-83-6 SDS

1645-83-6Relevant articles and documents

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Haszeldine,Steele

, p. 1199,1204 (1953)

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METHOD FOR PRODUCING 1-CHLORO-3,3,3-TRIFLUOROPROPENE

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Paragraph 0050; 0052-0053; 0060; 0066, (2020/02/10)

A method for manufacturing 1-chloro-3,3,3-trifluoropropene (1230zd) is provided. The method includes contacting a halogenated hydrocarbon compound having a carbon number of 3 and represented by a general formula (1) with a metal catalyst in a gas phase. [in-line-formulae]CFaCl3-a—CH2—CHFbCl2-b ??(1)[/in-line-formulae] In the formula, a is an integer from 0 to 2, b is 1 or 2 when a=0, b is 0 or 1 when a=1, and b is 0 when a=2.

Dry etching gas and dry etching method

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Page/Page column 8-9, (2019/11/11)

What is disclosed is a dry etching gas containing 1,3,3,3-tetrafluoropropene, wherein 1,3,3,3-tetrafluoropropene has purity of 99.5 mass % or more, and a total of concentration of each mixed metal component of Fe, Ni, Cr, Al, and Mo is 500 mass ppb or less. Furthermore, regarding to the dry etching gas, it is preferable that a content of nitrogen is 0.5 volume % or less, and that a content of water is 0.05 mass % or less. In a dry etching with a plasma gas obtained by making a dry etching gas into plasma, the dry etching gas of the present invention can improve etching selectivity of silicon-based material with respect to a mask.

Cogeneration process for preparing 1, 3, 3, 3 - tetrafluoropropene and/or 2, 3, 3, 3 - tetrafluoropropene process

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Paragraph 0039; 0040, (2017/08/25)

The present invention discloses a new process for co-producing 1,3,3,3-tetrafluoropropene and/or 2,3,3,3-tetrafluoropropene, wherein only a raw material 2-chloro-3,3,3-trifluoropropene is used to concurrently obtain two low-GFP alternative commercial products such as HFO-1234ze and HFO-1234yf.

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