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20267-56-5

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20267-56-5 Usage

Uses

Potassium Dithiooxalate was studied for its efficacy as an antidote for mercury poisoning.

Check Digit Verification of cas no

The CAS Registry Mumber 20267-56-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,0,2,6 and 7 respectively; the second part has 2 digits, 5 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 20267-56:
(7*2)+(6*0)+(5*2)+(4*6)+(3*7)+(2*5)+(1*6)=85
85 % 10 = 5
So 20267-56-5 is a valid CAS Registry Number.
InChI:InChI=1/C2H2O2S2.2K/c3-1(5)2(4)6;;/h(H,3,5)(H,4,6);;/q;2*+1/p-2

20267-56-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name dipotassium,ethanebis(thioate)

1.2 Other means of identification

Product number -
Other names Dikalium-1,2-dithiooxalat

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:20267-56-5 SDS

20267-56-5Relevant articles and documents

Room-Temperature Magnetoelectric Coupling in Electronic Ferroelectric Film based on [(n-C3H7)4N][FeIIIFeII(dto)3] (dto = C2O2S2)

Liu, Xiaolin,Wang, Bin,Huang, Xiaofeng,Dong, Xinwei,Ren, Yanping,Zhao, Haixia,Long, Lasheng,Zheng, Lansun

supporting information, p. 5779 - 5785 (2021/05/07)

Great importance has been attached to magnetoelectric coupling in multiferroic thin films owing to their extremely practical use in a new generation of devices. Here, a film of [(n-C3H7)4N][FeIIIFeII(dto)3] (1; dto = C2O2S2) was fabricated using a simple stamping process. As was revealed by our experimental results, in-plane ferroelectricity over a wide temperature range from 50 to 300 K was induced by electron hopping between FeII and FeIII sites. This mechanism was further confirmed by the ferroelectric observation of the compound [(n-C3H7)4N][FeIIIZnII(dto)3] (2; dto = C2O2S2), in which FeII ions were replaced by nonmagnetic metal ZnII ions, resulting in no obvious ferroelectric polarization. However, both ferroelectricity and magnetism are related to the magnetic Fe ions, implying a strong magnetoelectric coupling in 1. Through piezoresponse force microscopy (PFM), the observation of magnetoelectric coupling was achieved by manipulating ferroelectric domains under an in-plane magnetic field. The present work not only provides new insight into the design of molecular-based electronic ferroelectric/magnetoelectric materials but also paves the way for practical applications in a new generation of electronic devices.

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