224638-03-3

Basic information

• Product Name: Tantalum, dichlorotris(N-methylmethanaminato)-
• CAS NO: 224638-03-3
• Molecular Formula: C6H18Cl2N3Ta
• Molecular Weight: 384.083
• Mol File: 224638-03-3.mol
• Article Data: 1

Chemical Properties

• CAS DataBase Reference: Tantalum, dichlorotris(N-methylmethanaminato)-(CAS DataBase Reference)
• NIST Chemistry Reference: Tantalum, dichlorotris(N-methylmethanaminato)-(224638-03-3)
• EPA Substance Registry System: Tantalum, dichlorotris(N-methylmethanaminato)-(224638-03-3)

Safety Data

• Hazardous Substances Data: 224638-03-3(Hazardous Substances Data)

Upstream product

• 1092381-62-8 tetrakis(dimethylamino)tantalum chloride 
• 13529-75-4 N-lithio-N-trimethylsilyl-N',N'-dimethylhydrazine 

Downstream Products

• 1136094-76-2 (Me₂N)3Ta(ONMe₂)(OSiBu(t)Ph₂) 
• 1370023-31-6 (N-(2,6-diisopropylphenyl)pivalamido)tris(dimethylamino)tantalum(V) chloride 

Relevant articles and documents

New octahedral Ta(V) hydrazido-substituted compounds for atomic layer deposition: Syntheses, X-ray diffraction structures of TaCl(NMe2)3[N(TMS)NMe2] and Ta(NMe2)4[N(TMS)NMe2], and fluxional behavior of the amido and hydrazido ligands in solution

The synthesis and structural characterization of new tantalum(V) compounds containing a single hydrazido(I) ligand are reported. Hydrazinolysis of TaCl(NMe2)4 using trimethylsilyl(dimethyl)hydrazine affords the compound TaCl(NMe2)3[N(TMS)NMe2] in essentially quantitative yield. Metathetical replacement of the chloride ligand in TaCl(NMe2)3[N(TMS)NMe2] by LiNMe2 gives the all-nitrogen coordinated compound Ta(NMe2)4[N(TMS)NMe2]. VT 1H NMR studies support the existence of low-energy pathways involving rotation about the Ta-N bonds of the ancillary amido and hydrazido ligands in both hydrazido-substituted compounds. X-ray crystallographic analyses confirm the octahedral disposition about the tantalum metal in TaCl(NMe2)3[N(TMS)NMe2] and Ta(NMe2)4[N(TMS)NMe2] and the presence of an η2-hydrazido(I) ligand. Preliminary data using Ta(NMe2)4[N(TMS)NMe2] as an ALD precursor for the preparation of tantalum nitride and tantalum oxide thin films are presented.