22687-02-1Relevant articles and documents
Stabilization of the hindered urea bond through de-tert-butylation
Yang, Yingfeng,Ying, Hanze,Jia, Yunchao,Chen, Yingying,Cheng, Jianjun
supporting information, p. 3812 - 3815 (2021/04/21)
We report the discovery of an acid-assisted de-tert-butylation reaction that can instantly “turn off” the dynamicity of hindered urea bonds (HUBs) and thus broaden their applications. The reaction is demonstrated to be widely applicable to different hindered urea substrates, leading to improved chemical stabilities and mechanical properties of HUB-containing materials.
(AMIDE AMINO ALKANE) METAL COMPOUND, METHOD OF MANUFACTURING METAL-CONTAINING THIN FILM USING SAID METAL COMPOUND
-
Paragraph 0144, (2013/09/26)
The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M is Zn (Zinc) and R1 is methyl group are excluded; the metal compounds in which M is Bi (Bismuth) and R1 is t-butyl group are excluded; and in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.