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27921-59-1

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27921-59-1 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 27921-59-1 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,7,9,2 and 1 respectively; the second part has 2 digits, 5 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 27921-59:
(7*2)+(6*7)+(5*9)+(4*2)+(3*1)+(2*5)+(1*9)=131
131 % 10 = 1
So 27921-59-1 is a valid CAS Registry Number.

27921-59-1Upstream product

27921-59-1Downstream Products

27921-59-1Relevant articles and documents

Temperature-mediated polymorphism in molecular crystals: The impact on crystal packing and charge transport

Stevens, Loah A.,Goetz, Katelyn P.,Fonari, Alexandr,Shu, Ying,Williamson, Rachel M.,Brdas, Jean-Luc,Coropceanu, Veaceslav,Jurchescu, Oana D.,Collis, Gavin E.

, p. 112 - 118 (2015)

We report a novel synthesis to ultra high purity 7,14-bis((trimethylsilyl)ethynyl)dibenzo[b,def]-chrysene (TMS-DBC) and the use of this material in the growth of single crystals by solution and vapor deposition techniques. We observe that the substrate temperature has a dramatic impact on the crystal growth, producing two distinct polymorphs of TMS-DBC; low temperature (LT) fine red needles and high temperature (HT) large yellow platelets. Single crystal X-ray crystallography confirms packing structures where the LT crystals form a 1D slipped-stack structure, while the HT crystals adopt a 2D brickwork motif. These polymorphs also represent a rare example where both are extremely stable and do not interconvert to the other crystal structure upon solvent or thermal annealing. Single crystal organic field-effect transistors of the LT and HT crystals show that the HT 2D brickwork motif produces hole mobilities as high as 2.1 cm2 V-1 s-1, while the mobility of the 1D structure is significantly lower, at 0.028 cm2 V-1 s-1. Electronic-structure calculations indicate that the superior charge transport in the brickwork polymorph in comparison to the slipped-stack polymorph is due to the presence of an increased dimensionality of the charge migration pathways.

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