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29664-84-4

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29664-84-4 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 29664-84-4 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,9,6,6 and 4 respectively; the second part has 2 digits, 8 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 29664-84:
(7*2)+(6*9)+(5*6)+(4*6)+(3*4)+(2*8)+(1*4)=154
154 % 10 = 4
So 29664-84-4 is a valid CAS Registry Number.

29664-84-4Downstream Products

29664-84-4Relevant articles and documents

Valence states of rare-earth ions in RERuSn3 (RE=La, Ce, Pr, Nd, Sm) and related compounds studied by core-level photoemission spectroscopy

Ishii, Hiroyoshi,Hanyu, Takaaki,Fukuhara, Tadashi,Sakamoto, Isao,Sato, Hideyuki,Yamaguchi, Shigeo

, p. 811 - 817 (1993)

We have measured the 3d and 4d core-level X-ray photoelectron spectra of rare earths in RERuSn3 (RE=La, Ce, Pr, Nd and Sm) and related rare-earth compounds. The Ce 3d spectra of CeRuSnx, (x=2.85, 3.0 and 3.15) show the common feature

Phase equilibria in the Sm-Zr-Sb system at 1070 K

Morozkin

, p. 187 - 189 (2002)

Phase equilibria in the Sm-Zr-Sb system were investigated using x ray powder diffraction and metallographic analysis. The alloys were made in an electric arc furnace under an argon atmosphere using non-consumable tungsten electrode and a water-cooled tray. It was found that the system contained extended regions of solid solutions for SmSb. The results obtained were used in the construction of the isothermal cross-section of the Sm-Zr-Sb system at 1070 K.

Mg5.23Sm0.77Sb4: An ordered superstructure derived from the Mg3Sb2 structure type

Gupta, Shalabh,Ganguli, Ashok K.,Corbett, John D.

, p. 8175 - 8178 (2006)

The ternary polar intermetallic phase Mg5.231(8)Sm 0.769(8)Sb4 has been obtained from solid-state reactions at 700-850°C in sealed Ta or Nb containers when the synthetic conditions took into account its characteristic incongruent melting point. The compound crystallizes in the trigonal space group P3 (Z = 1) with a = 4.618(1) A and c = 14.902(6) A in a structure that derives from that of Mg 3Sb2 (anti-La2O3 type). This composition appears to be near the lower limit of Sm content, and solutions with appreciably higher Sm contents are also stable [Mg6-xSm xSb4, x ≤ 1]. The result provides the first example of a superstructure of a Mg3Sb2-like structure with a doubled c axis induced by ordering a mixture of the larger divalent Sm and Mg ions separately within alternate layers of octahedral sites. Still larger proportions of Sm also give rise to a second solid solution region in the parent Mg 3Sb2 type structure (P3m1), Mg3-ySm ySb4, 0 ≤ y ≤ 1. Retention of the same 3e - valence electron counts per antimony in all of these phases suggests that the compounds remain electron precise and Zintl phases. Analogous compounds with Ca, Sr, or Ba substitution have evidently not been investigated.

Investigation of the transport properties and compositions of the Ca2RE7Pn5O5 series (RE=Pr, Sm, Gd, Dy; Pn=Sb, Bi)

Forbes, Scott,Yuan, Fang,Kosuda, Kosuke,Kolodiazhnyi, Taras,Mozharivskyj, Yurij

, p. 148 - 154 (2016/09/09)

The Ca2RE7Pn5O5 phases (RE=Pr, Sm, Gd, Dy; Pn=Sb, Bi) were successfully prepared from high temperature reactions at 1225–1300?°C. These phases maintain the same structure types as the parent RE9Pn5O5 phases, except for a Ca/RE mixing. The study and preparation of these phases was motivated by the desire to shift the metallic type properties of the parent RE9Pn5O5 phases to a level more suitable for thermoelectric applications. Electrical resistivity measurements performed on pure, bulk samples indicated all phases to be narrow band gap semiconductors or semimetals, supporting the charge balanced electron count of the Ca2RE7Pn5O5 composition. Unfortunately, all samples are too electrically resistive for any potential usage as thermoelectrics. Electronic band structure calculations performed on idealized RE9Pn5O5 structures revealed the presence of a pseudogap at the Fermi level, which is consistent with the observed electrical resistivity and Seebeck coefficient behavior.

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