4098-97-9Relevant articles and documents
An Electroreductive Approach to Radical Silylation via the Activation of Strong Si-Cl Bond
Lu, Lingxiang,Siu, Juno C.,Lai, Yihuan,Lin, Song
supporting information, p. 21272 - 21278 (2020/12/21)
The construction of C(sp3)-Si bonds is important in synthetic, medicinal, and materials chemistry. In this context, reactions mediated by silyl radicals have become increasingly attractive but methods for accessing these intermediates remain limited. We present a new strategy for silyl radical generation via electroreduction of readily available chlorosilanes. At highly biased potentials, electrochemistry grants access to silyl radicals through energetically uphill reductive cleavage of strong Si-Cl bonds. This strategy proved to be general in various alkene silylation reactions including disilylation, hydrosilylation, and allylic silylation under simple and transition-metal-free conditions.
Conductive molecular silicon
Klausen, Rebekka S.,Widawsky, Jonathan R.,Steigerwald, Michael L.,Venkataraman, Latha,Nuckolls, Colin
supporting information; experimental part, p. 4541 - 4544 (2012/04/23)
Bulk silicon, the bedrock of information technology, consists of the deceptively simple electronic structure of just Si-Si σ bonds. Diamond has the same lattice structure as silicon, yet the two materials have dramatically different electronic properties. Here we report the specific synthesis and electrical characterization of a class of molecules, oligosilanes, that contain strongly interacting Si-Si σ bonds, the essential components of the bulk semiconductor. We used the scanning tunneling microscope-based break-junction technique to compare the single-molecule conductance of these oligosilanes to those of alkanes. We found that the molecular conductance decreases exponentially with increasing chain length with a decay constant β = 0.27 ± 0.01 A-1, comparable to that of a conjugated chain of C = C π bonds. This result demonstrates the profound implications of σ conjugation for the conductivity of silicon.
Polymeric organosilicon systems. XXIX. Thermal properties of poly[(disilanylene)oligophenylenes]
Ohshita, Joji,Sugimoto, Kazunori,Watanabe, Tsuguo,Kunai, Atsutaka,Ishikawa, Mitsuo,Aoyama, Susumu
, p. 47 - 56 (2007/10/03)
Thermal properties of variously substituted poly[(disilanylene)oligophenylenes], [(SiR1R2SiR1R2)(p-C6H4)m]n (R1=R2=Me, R1=R2=Et, and R1=Ph, R2=Me, m=1-4) were investigated. The thermogravimetric analysis of the polymers in the range of 20-1000°C showed rapid weight loss starting from about 400°C. The total weight loss of the polymers at 1000°C was calculated to be 54.5-75.5% based on the initial weight of the polymers. GC-MS analysis of the volatile products obtained from the pyrolysis of the polymers with R1=R2=Me, m=2 and R1=R2=Et, m=1-4 at 500°C indicated the formation of silicon-containing oligomers arising from the Si-Si and Si-phenylene bond cleavage, mainly. The formation of oligophenylenes, H(C6H4)lH (l=1-4), was also observed in the pyrolysis of the polymers with m=3 and 4. A model reaction for the polymer degradation was also examined, using 1,2-diphenyltetramethyldisilane.
