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50926-11-9

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50926-11-9 Usage

Description

Indium tin oxide (ITO), also known as tin-doped indium oxide, is a transparent conducting oxide (TCO) material that is a mixture of indium(III) oxide (In2O3) and tin(IV) oxide (SnO2), typically 90% In2O3 and 10% SnO2 by weight. In powder form, ITO is yellow-green in color, but it becomes transparent and colorless when deposited as a thin film at thicknesses of 1000-3000 angstroms. When deposited as a thin film on glass or clear plastic, it functions as a transparent electrical conductor.

Uses

Used in Display Technologies:
Indium tin oxide is used as a transparent conducting oxide for various display technologies, such as LCD, OLED, plasma, electroluminescent, and electrochromic displays, due to its superior conductivity, transparency, stability, and ease of patterning to form transparent circuitry.
Used in Touch Screen Technologies:
ITO is used as a transparent conductor in touch screen technologies, providing the necessary electrical conductivity and optical transparency for touch-sensitive applications.
Used in Transparent Electrodes:
Indium tin oxide nanoparticles are investigated for use in the formation of transparent electrodes, offering improved performance in various applications.
Used in Conductive Paper and Organic Contaminants:
ITO is used in the formation of conductive paper and for the removal of organic contaminants, leveraging its electrical conductivity and transparency.
Used in Transparent Conductive Oxide Films and Magnetic Nanocomposites:
Indium tin oxide is used in the creation of transparent conductive oxide films and magnetic nanocomposites, taking advantage of its electrical and optical properties.
Used in Electrochromic Materials and Biomedical Applications:
ITO is employed in electrochromic materials and biomedical applications, where its unique properties are beneficial.
Used in Antistatic Coatings, EMI Shielding, and Photovoltaic Solar Cells:
Indium tin oxide is used as an antistatic coating, EMI shielding, and in photovoltaic solar cells, showcasing its versatility in different industries.
Used in Aircraft Windshield and Freezer Case Glass for Demisting:
ITO is utilized in aircraft windshields and freezer case glass for demisting purposes, due to its infrared reflecting properties.
Used in Low-E Glass and Low-Pressure Sodium Lamps:
Indium tin oxide is used as an infrared reflecting coating in low-E glass and low-pressure sodium lamps to reflect heat energy and improve energy efficiency.

Check Digit Verification of cas no

The CAS Registry Mumber 50926-11-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 5,0,9,2 and 6 respectively; the second part has 2 digits, 1 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 50926-11:
(7*5)+(6*0)+(5*9)+(4*2)+(3*6)+(2*1)+(1*1)=109
109 % 10 = 9
So 50926-11-9 is a valid CAS Registry Number.
InChI:InChI=1/2In.5O.Sn/q2*+3;5*-2;+4

50926-11-9 Well-known Company Product Price

  • Brand
  • (Code)Product description
  • CAS number
  • Packaging
  • Price
  • Detail
  • Alfa Aesar

  • (36348)  Indium tin oxide, 99.99% (metals basis)   

  • 50926-11-9

  • 5g

  • 752.0CNY

  • Detail
  • Alfa Aesar

  • (36348)  Indium tin oxide, 99.99% (metals basis)   

  • 50926-11-9

  • 25g

  • 974.0CNY

  • Detail
  • Alfa Aesar

  • (36348)  Indium tin oxide, 99.99% (metals basis)   

  • 50926-11-9

  • 100g

  • 2861.0CNY

  • Detail
  • Alfa Aesar

  • (44927)  Indium tin oxide, NanoTek?, 99.5%   

  • 50926-11-9

  • 25g

  • 1370.0CNY

  • Detail
  • Alfa Aesar

  • (44927)  Indium tin oxide, NanoTek?, 99.5%   

  • 50926-11-9

  • 100g

  • 4946.0CNY

  • Detail
  • Alfa Aesar

  • (44927)  Indium tin oxide, NanoTek?, 99.5%   

  • 50926-11-9

  • 500g

  • 20948.0CNY

  • Detail
  • Alfa Aesar

  • (42677)  Indium tin oxide, Vacuum Deposition Grade, 99.99% (metals basis)   

  • 50926-11-9

  • 5g

  • 475.0CNY

  • Detail
  • Alfa Aesar

  • (42677)  Indium tin oxide, Vacuum Deposition Grade, 99.99% (metals basis)   

  • 50926-11-9

  • 25g

  • 2015.0CNY

  • Detail
  • Alfa Aesar

  • (42677)  Indium tin oxide, Vacuum Deposition Grade, 99.99% (metals basis)   

  • 50926-11-9

  • 100g

  • 7609.0CNY

  • Detail
  • Aldrich

  • (544876)  Indiumtinoxide  nanopowder, <50 nm particle size

  • 50926-11-9

  • 544876-5G

  • 2,095.47CNY

  • Detail
  • Aldrich

  • (544876)  Indiumtinoxide  nanopowder, <50 nm particle size

  • 50926-11-9

  • 544876-25G

  • 8,113.95CNY

  • Detail
  • Aldrich

  • (747939)  Indiumtinoxide  ≥99.5% trace metals basis, 18 nm particle size (SEM), 20 wt. % in H2O

  • 50926-11-9

  • 747939-25G

  • 2,638.35CNY

  • Detail

50926-11-9SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 13, 2017

Revision Date: Aug 13, 2017

1.Identification

1.1 GHS Product identifier

Product name Indium Tin Oxide (Metals Basis)

1.2 Other means of identification

Product number -
Other names ITO coated slide,square,ITO

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:50926-11-9 SDS

50926-11-9Upstream product

50926-11-9Downstream Products

50926-11-9Relevant articles and documents

Performance of InSnZrO as transparent conductive oxides

Zhang,Yu,Jin,Ge,Yin

, p. 955 - 962 (2010)

InSnZrO thin films were deposited on glass substrates by magnetron sputtering with an indium-tin-oxide (ITO) target and a zirconium target. X-ray diffractometry (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) revealed that InSnZrO thin films had better crystalline structure, larger grain size, and lower surface roughness than ITO thin films. Zr doping markedly improved the optical- electrical characteristics. In comparison with ITO thin films, the resistivity of InSnZrO thin films deposited at room temperature decreased from 6.24 × 10-3 to 2.20 × 10-3 ωcm, and the maximum optical transmittance in the visible range was enhanced from 53.7 to 66.1%. The thin films showed an obvious Burstein-Moss effect with substrate temperature. Moreover, the direct transition model showed a wider optical bandgap of InSnZrO thin films than that of ITO thin films. As a result, InSnZrO thin films prepared by cosputtering revealed better overall properties than traditional ITO thin films.

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