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54514-59-9

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54514-59-9 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 54514-59-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 5,4,5,1 and 4 respectively; the second part has 2 digits, 5 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 54514-59:
(7*5)+(6*4)+(5*5)+(4*1)+(3*4)+(2*5)+(1*9)=119
119 % 10 = 9
So 54514-59-9 is a valid CAS Registry Number.

54514-59-9SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 20, 2017

Revision Date: Aug 20, 2017

1.Identification

1.1 GHS Product identifier

Product name tri(propan-2-yl)gallane

1.2 Other means of identification

Product number -
Other names Gallium,tris(1-methylethyl)

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:54514-59-9 SDS

54514-59-9Downstream Products

54514-59-9Relevant articles and documents

Metalated diphosphanylsiloxanes with polycyclic and polymeric structures

von H?nisch, Carsten,Stahl, Sven

, p. 2780 - 2783 (2007)

The reactions of the diphosphanylsiloxane O(SiiPr2PH2)2 (1) with MiPr3 (M = Ga, In) produced the polycyclic compounds [O{SiiPr2(PH)MiPr2}{SiiPr2(P)MiPr}] 2 (2, 3). Compounds 2 and 3 are composed of three M2P2 rings forming a ladder structure and two OSi2P2M rings. By reactions of 1 with n-BuLi the polymeric compound [O(SiiPr2PHLi)2(THF)(TMEDA)] · THF (4) was obtained.

Preparation of organometal compounds

-

Page 6, (2008/06/13)

A method of preparing organometal compounds that does not use oxygenated solvents is provided. The compounds produced by such method are particularly useful as precursor compounds for metalorganic chemical vapor deposition processes used in the manufacture of electronic devices. Methods of depositing metal films using such organometal compounds are also provided.

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