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76392-13-7

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76392-13-7 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 76392-13-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 7,6,3,9 and 2 respectively; the second part has 2 digits, 1 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 76392-13:
(7*7)+(6*6)+(5*3)+(4*9)+(3*2)+(2*1)+(1*3)=147
147 % 10 = 7
So 76392-13-7 is a valid CAS Registry Number.

76392-13-7SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name acetyl methacrylate

1.2 Other means of identification

Product number -
Other names Essigsaeure-methacrylsaeureanhydrid

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:76392-13-7 SDS

76392-13-7Relevant articles and documents

Diester acid protection structure monomer and preparation method thereof

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Paragraph 0076; 0083; 0086; 0093, (2020/01/03)

The invention relates to the field of optical materials and in particular to a diester acid protection structure monomer and a preparation method thereof. The diester acid protection structure monomeris used as a raw material of a photoresist required in integrated circuit manufacturing. Due to a diester long side chain, the photoresist has a better film-forming property; due to the fact that small-size and high-acid-sensitivity groups hung outside can improve the deprotection reaction efficiency in the photoetching process, the quality of a photoetched product is improved; and in addition, the diester acid protection structure monomer prepared through the process method has high yield and purity, and the performance of the photoresist is further guaranteed.

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