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7783-51-9

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7783-51-9 Usage

Description

Gallium(III) fluoride, also known as gallium trifluoride, is a white powder or colorless needle-like crystalline solid with a purity of 99.95%. It is formed by the thermal decomposition of ammonium hexafluorogallate in an argon atmosphere. GALLIUM(III) FLUORIDE is a significant inorganic compound with unique chemical properties and a wide range of applications across various industries.

Uses

Used in Optical Industry:
Gallium(III) fluoride is used as a key component in the preparation and study of optical fluorogallate glasses. Its unique properties contribute to the development of high-quality optical materials with specific refractive indices and dispersion characteristics, making them suitable for various optical applications, such as lenses, prisms, and optical fibers.
Used in Chemical Industry:
Gallium(III) fluoride reacts with mineral acids to produce hydrofluoric acid, which is a valuable chemical reagent in various chemical processes. This reaction highlights the compound's role in the chemical industry, where it can be utilized for the synthesis of other fluorides and in the production of hydrofluoric acid for various applications.

Production Methods

Gallium fluoride is produced by reaction of gallium with fluoride.

Check Digit Verification of cas no

The CAS Registry Mumber 7783-51-9 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,7,8 and 3 respectively; the second part has 2 digits, 5 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 7783-51:
(6*7)+(5*7)+(4*8)+(3*3)+(2*5)+(1*1)=129
129 % 10 = 9
So 7783-51-9 is a valid CAS Registry Number.
InChI:InChI=1/3FH.Ga/h3*1H;/q;;;+3/p-3

7783-51-9 Well-known Company Product Price

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  • Alfa Aesar

  • (13987)  Gallium(III) fluoride, 99.999% (metals basis)   

  • 7783-51-9

  • 1g

  • 940.0CNY

  • Detail
  • Alfa Aesar

  • (13987)  Gallium(III) fluoride, 99.999% (metals basis)   

  • 7783-51-9

  • 5g

  • 4469.0CNY

  • Detail
  • Alfa Aesar

  • (32112)  Gallium(III) fluoride, anhydrous, 99.85% (metals basis)   

  • 7783-51-9

  • 1g

  • 547.0CNY

  • Detail
  • Alfa Aesar

  • (32112)  Gallium(III) fluoride, anhydrous, 99.85% (metals basis)   

  • 7783-51-9

  • 5g

  • 2117.0CNY

  • Detail

7783-51-9SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name Gallium(Iii) Fluoride

1.2 Other means of identification

Product number -
Other names gallium,trifluoride

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7783-51-9 SDS

7783-51-9Downstream Products

7783-51-9Relevant articles and documents

Study on the stability of GaF3-based glasses by differential scanning calorimetry

Zhu,Jin,Dong,Qiang,Ma

, p. 479 - 487 (2001)

The glass formation and devitrification of GaF3-based glasses were studied by differential scanning calorimetry. A comparison of various simple quantitative methods to assess the level of stability of multi-component fluoride glass systems is presented. Most of these methods are based on critical temperatures. In this paper a new parameter kb(T) is added to the stability criteria. The stability of several GaF3-based glasses were experimentally evaluated and correlated with the activation energies of crystallization via this new kinetic criterion and compared with those evaluated by other criteria.

Recognition on systems RbF-GaF3 and CsF-GaF3

Chen,Zhang

, p. 55 - 59 (2000)

The systems RbF-GaF3 and CsF-GaF3 were re-investigated by DTA and XRD method. In the system RbF-GaF3, with eutectic E1 at 750°C in the location of 8.5 mol% GaF3 and E2 at 749°C in the location of 43.0 mol% GaF3, three compounds Rb3GaF6, RbGaF4 and RbF·2GaF3 were identified and indexed by XRD. The indexed result of α-Rb3GaF6 could not be successfully obtained, β-Rb3GaF6 is tetragonal, a = 6.324±0.004, c = 8.860±0.003 A?. RbGaF4 is orthorhombic, a = 9.821 ± 0.006, b = 9.517 ± 0.005, c = 8.060 ± 0.006 A?; RbF·2GaF3 is also orthorhombic, a = 9.459 ± 0.005, b = 9.336 ± 0.005, c = 7.685 ± 0.005 A?. In the system CsF-GaF3, with eutectic E1 at 66C in the location of 7.5 mol% GaF3 and E2 at 675°C in the position of 44.0 mol% GaF3, two compounds were confirmed. α-Cs3GaF6 is orthorhombic with a = 10.62 ± 0.02, b = 9.959 ± 0.006 and c = 5.607 ± 0.005 A?; β-Cs3GaF6 is also orthorhombic, a = 10.356 ± 0.003, b = 8.280 ± 0.003, c = 7.621 ± 0.005 A?; γ-Cs3GaF6 is tetragonal, a = 6.833 ± 0.003, c = 9.869 ± 0.002 A?; CsGaF4 is orthorhombic, a = 8.571 ± 0.007, b = 7.575 ± 0.007 and c = 6.981 ± 0.006 A?. (C) 2000 Elsevier Science B.V.

Structural and magnetochemical studies of Ba5Mn3F19 and related compounds AII5MIII3F19

Dahlke,Graulich,Welsch,Pebler,Babel

, p. 1255 - 1263 (2008/10/08)

Single crystal structure determinations by X-ray methods were performed at the following compounds, crystallizing tetragonally body-centred (Z = 4): Sr5V3F19 (a = 1423.4(2), c = 728.9(1) pm), Sr5Cr3F19 (a = 1423.5(2), c = 728.1(1) pm), Ba5Mn3F19 (a =1468.9(1), c =770.3(1) pm, Ba5Fe3F19 (a =1483.5(1), c =766.7 (1) pm), and Ba5Ga3F19 (a = 1466.0(2), c = 760.1(2) pm). Only Ba5Mn3F19 was refined in space group I4cm (mean distances for elongated octahedra Mn1-F: 185/207pm equatorial/axial; for compressed octahedra Mn2-F: 199/182 pm), the remaining compounds in space group I4/m. In all cases the octahedral ligand spheres of the M1 atoms showed disorder, the [M1F6] octahedra being connected into chains in one part of the compounds and into dimers in the other. The magnetic properties of the V, Cr and Mn compounds named above and of Pb5Mn3F19 and Sr5Fe3F19 as well were studied; the results are discussed in context with the in part problematic structures.

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