Highly transparent ZINC NITRIDE (cas 1313-49-1) thin films by RF magnetron sputtering with enhanced optoelectronic behavior

Add time:08/16/2019    Source:sciencedirect.com

Transparent semiconducting nitrides are important materials for many modern technologies. Here, optical transparent semiconducting ZINC NITRIDE (cas 1313-49-1) (Zn3N2) thin films have been developed by reactive RF magnetron sputtering at different nitrogen (N2) contents. The deposited films are found to be cubic with preferred orientation of (3 2 1) plane. High optical transmittance (∼96%) and refractive index (1.32) at the wavelength of 500 nm and optical band gap of 3.1 eV have been observed for the films deposited at 45% nitrogen content. The investigation on other optical constants such as extinction coefficient and dielectric constant as a function of wavelength shows enhanced optical behavior. The Zn3N2 thin films show n-type conductivity with carrier concentration of ∼1020–1021 cm−3, mobility in the range of 4 to 56 cm2/Vs (which is 1–2 times higher than the values of TCOs) and resistivity around 10−4 Ωcm as a function of nitrogen content. These results suggested that Zn3N2 thin films could perform as potential transparent semiconductors for thin film solar cells.

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