- SILICON PRECURSOR AND METHOD OF MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME
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The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.
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Paragraph 0069-0074
(2021/09/10)
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- Chloraminosilanes II. Preparation and spectroscopic studies on alkyl-(dimethylamino)chlorosilanes
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Several new compounds containing both chloro and dimethylamino groups linked to silicon have been prepared. The general method involved reacting a solution of the appropriate polychlorosilane in ether at ca. - 50° with a chilled ethereal solution of dimethylamine. Prepared in this fashion were CH3Si(NMe2)Cl2, CH3Si(NMe2)2-Cl, PhSi(NMe2)Cl2, PhSi(NMe2)2Cl, CH3(H)Si(NMe2)Cl, (CH3)2Si(NMe2)Cl, CH2CH(CH3)Si(NMe2)Cl, and Ph2Si(NMe2)Cl. Comparison of the spectra of these compounds with those in the perhalo and peramine series showed that replacement of NMe2 for Cl resulted in an upfield shift of the resonances of the other groups linked to silicon, a shift which parallels that observed upon substitution of CH3 for Cl. The relationship of ν(SiH) in the IR and δ(SiH) in the NMR spectra was linear.
- Washburne,Peterson Jr.
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