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Conclusion
In conclusion, a series of fully poly(methyl)silsesquioxane (PMSSQ)-
based spin-on-glass resins were synthesized using both a cyclic
siloxane precursor and an incompletely condensed methyl-
substituted POSS compound as sol–gel precursors. The cyclic
precursor provided mechanical robustness, and the incorpora-
tion of incompletely condensed methyl-substituted POSS
compounds imbued ultra low-k properties. Through the incor-
poration of incompletely condensed methyl-substituted POSS
compounds at the molecular level through sol–gel hydrolysis–
polycondensation reaction of the silanol groups, the free-
volume formed through the octahedral siloxane core of POSS
lowered the dielectric constant of the obtained spin-on-glass
resins all the way down to ultra low-k levels (k B 1.8), while
maintaining mechanical robustness (E 4 4.0 GPa) for practical
applications in integrated circuits. The ultra low-k and mechanical
properties revealed that these materials were able to withstand
severe etching conditions and CMP processing, and may ulti-
mately prove useful for next generation ultra low-k integrated
circuits.
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Acknowledgements
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This work was financially supported by a grant from the
Fundamental R&D Program for Core Technology of Materials
funded by the Ministry of Knowledge, Economy, Republic of
Korea and partially by the International Collaborative R&D
Program (N0000678) funded by the Ministry of Trade, Industry,
and Energy, (MOTIE, Korea).
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