Journal of the American Chemical Society
Communication
Notes
The authors declare no competing financial interest.
ACKNOWLEDGMENTS
■
This work was supported by Semiconductor Research
Corporation. Scott B. Clendenning of Intel Corporation is
acknowledged for helpful discussions.
REFERENCES
■
(
2
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2
́
(
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14
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4c
metal films at a substrate temperature of 140 °C, although the
basic ALD growth parameters of this process were not
reported. In the present study, the high reactivity of
BH (NHMe ) toward 2, 3, 7, and 9 permits self-limited film
3
2
growth at <200 °C. These attributes should enable many new
applications of ALD-grown first row transition metal films.
ASSOCIATED CONTENT
Supporting Information
■
*
S
Synthetic procedures, analytical and spectroscopic data for 1−
(
(
10) See the Supporting Information.
11) (a) Vidjayacoumar, B.; Emslie, D. J. H.; Clendenning, S. B.;
1
5, X-ray crystallographic data for 10−12, 14, and 15 in CIF
format, and film deposition and characterization data. This
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844−4853. (b) Vidjayacoumar, B.; Emslie, D. J. H.; Blackwell, J. M.;
Clendenning, S. B.; Britten, J. F. Chem. Mater. 2010, 22, 4854−4866.
c) Vidjayacoumar, B.; Ramalingam, V.; Emslie, D. J. H.; Blackwell, J.
4
(
AUTHOR INFORMATION
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