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Trifluorosilyl radical

Base Information Edit
  • Chemical Name:Trifluorosilyl radical
  • CAS No.:14835-14-4
  • Molecular Formula:F3Si
  • Molecular Weight:85.0807
  • Hs Code.:
  • DSSTox Substance ID:DTXSID10163973,DTXSID70928707
  • Nikkaji Number:J505.740J
  • Wikipedia:Trifluorosilyl radical
  • Wikidata:Q83032989
  • Mol file:14835-14-4.mol
Trifluorosilyl radical

Synonyms:Trifluorosilyl radical;trifluorosilicon;14835-14-4;Trifluorosilyl;SILANE, TRIFLUORO-(6CI,7CI,8CI,9CI);SiHF3;SiF3;DTXSID10163973;DTXSID70928707;FT-0694038

Suppliers and Price of Trifluorosilyl radical
Supply Marketing:Edit
Business phase:
The product has achieved commercial mass production*data from LookChem market partment
Manufacturers and distributors:
  • Manufacture/Brand
  • Chemicals and raw materials
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Total 0 raw suppliers
Chemical Property of Trifluorosilyl radical Edit
Chemical Property:
  • Boiling Point:°Cat760mmHg 
  • Flash Point:°C 
  • PSA:0.00000 
  • Density:g/cm3 
  • LogP:0.87980 
  • Hydrogen Bond Donor Count:0
  • Hydrogen Bond Acceptor Count:3
  • Rotatable Bond Count:0
  • Exact Mass:84.97213602
  • Heavy Atom Count:4
  • Complexity:8
Purity/Quality:
Safty Information:
  • Pictogram(s):  
  • Hazard Codes: 
MSDS Files:

SDS file from LookChem

Useful:
  • Canonical SMILES:F[Si](F)F
Technology Process of Trifluorosilyl radical

There total 7 articles about Trifluorosilyl radical which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:
Guidance literature:
In solid matrix; byproducts: SiHD3; Irradiation (UV/VIS); dilg. SiD4 with Ar (various ratios); codeposition with F2 dild. with Ar (various ratios) on a substrate at 13.+-1. K; UV-photolysis (220-1000 nm) for 1 h; annealing to 25.+-.2 K;; not isolated, identified by IR-spectroscopy; further products;;
DOI:10.1021/j100192a020
Guidance literature:
In solid matrix; byproducts: HF, H2O, O2F; Irradiation (UV/VIS); dilg. SiH4 with Ar (various ratios); codeposition with F2 dild. with Ar (various ratios) on a substrate at 13.+-1. K; UV-photolysis (220-1000 nm) for 1 h; annealing to 25.+-.2 K;; not isolated, identified by IR-spectroscopy; further products;;
DOI:10.1021/j100192a020
Guidance literature:
XeF2-beam (300 K), photoassisted etching of silicon;; mass spectroscopy;
DOI:10.1103/PhysRevB.39.10120
upstream raw materials:

monosilane

fluorine

xenon difluoride

tungsten silicide

Downstream raw materials:

silicon ion

SiF(1+)

SiF2(1+)

SiF3(1+)

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