1313-49-1

Basic information

• Product Name: ZINC NITRIDE
• Synonyms: Zinc nitride, 99% trace metals basis;ZINC NITRIDE;trizinc dinitride;Zincnitride(metalsbasis);ZINC NITRIDE, 99.9%;Zine nitride;Zinc nitride, 99% (metals basis)
• CAS NO: 1313-49-1
• Molecular Formula: N2Zn3
• Molecular Weight: 224.18
• EINECS: 215-207-3
• Mol File: 1313-49-1.mol
• Article Data: 0

Chemical Properties

• Boiling Point: °Cat760mmHg
• Flash Point: °C
• Appearance: /Powder
• Density: 6.22
• Water Solubility: Insoluble in water. Soluble in hydrochloric acid.
• CAS DataBase Reference: ZINC NITRIDE(CAS DataBase Reference)
• NIST Chemistry Reference: ZINC NITRIDE(1313-49-1)
• EPA Substance Registry System: ZINC NITRIDE(1313-49-1)

Safety Data

• TSCA: Yes
• Hazardous Substances Data: 1313-49-1(Hazardous Substances Data)

Usage

Description

Zinc nitride (Zn3N2) is a scarcely known II-V compound that crystallizes in the anti-bixbyite structure with a body-centered cubic lattice. It presents n-type conductivity due to the substitutional incorporation of oxygen atoms in nitrogen sites. Carrier concentrations in the 10^18-10^19 cm^-3 range have been measured by Hall effect in undoped samples grown by magnetron sputtering and molecular beam epitaxy.
Used in Optoelectronics Industry:
Zinc nitride is used as a promising candidate for optoelectronics applications due to its high electron mobility and high electrical conductivity.
Used in Semiconductor Industry:
Zinc nitride is used as a potential nitride-based transparent conductor, which is doped with oxygen to prepare semiconductors.
Chemical Properties:
Zinc nitride has a purity of 99.9%, appears bluish gray, and has a crystal structure with a lattice constant of 0.972 nm.

Preparation

Zinc nitride, Zn3N2, prepared from zinc dust and NH3, hydrolyzes readily to NH3 and the oxide.

InChI:InChI=1/2N.3Zn/q2*-3;3*+2

Related news

Thermal annealing effect on ZINC NITRIDE (cas 1313-49-1) thin films deposited by reactive rf-magnetron sputtering process08/23/2019

Zinc nitride films were deposited by reactive radio-frequency magnetron sputtering using a zinc target in a nitrogen and argon plasma. The deposited films were annealed in either air or O2 at 300 °C to investigate the annealing effect on the microstructure, optical properties, and electronic ch...detailed

Optical band gap of ZINC NITRIDE (cas 1313-49-1) films prepared on quartz substrates from a ZINC NITRIDE (cas 1313-49-1) target by reactive rf magnetron sputtering08/21/2019

Polycrystalline zinc nitride films have been synthesized onto quartz substrates from the zinc nitride target and the nitrogen working gas by reactive rf magnetron sputtering at room temperature. X-ray diffraction study indicates that polycrystalline zinc nitride films are of cubic structure with...detailed

Pressure-induced phase transition of ZINC NITRIDE (cas 1313-49-1) chlorine08/20/2019

The phase stability of Zn2NCl is systematically studied by using the CALYPSO swarm structure searching method coupled with first principles calculations under pressure up to 100 GPa. The experimental ground state structure Pna21 (phase) is confirmed. Furthermore, two new high-pressure structures...detailed

Microstructure and optical properties of ZINC NITRIDE (cas 1313-49-1) films deposited by magnetron sputtering method08/19/2019

Zinc nitride films were coated on a glass substrate by reactive magnetron sputtering method using a zinc target and a mixture of N2 and Ar gasses. The deposited films were characterized for microstructure, surface morphology and optical properties. These films possess a polycrystalline structure...detailed

Highly transparent ZINC NITRIDE (cas 1313-49-1) thin films by RF magnetron sputtering with enhanced optoelectronic behavior08/16/2019

Transparent semiconducting nitrides are important materials for many modern technologies. Here, optical transparent semiconducting zinc nitride (Zn3N2) thin films have been developed by reactive RF magnetron sputtering at different nitrogen (N2) contents. The deposited films are found to be cubi...detailed

Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited ZINC NITRIDE (cas 1313-49-1) films08/15/2019

In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn3N2) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 104 and ...detailed