1356536-81-6Relevant articles and documents
Dihydrogen activation by a silylium silylene frustrated lewis pair and the unexpected isomerization reaction of a protonated silylene
Schaefer, Annemarie,Reissmann, Matti,Schaefer, Andre,Schmidtmann, Marc,Mueller, Thomas
, p. 9381 - 9386 (2014)
The isolable silylene 1 forms a frustrated Lewis pair with silylium ion 2 that is able to split hydrogen under ambient conditions. The protonated silylene 3 obtained in this reaction isomerizes to yield the hydrogen-bridged disilyl cation 4. Cation 4 is fully characterized by NMR spectroscopy and by XRD analysis. Its formation via the protonated silylene 3 is indicated by independent synthesis of cation 3 by hydride abstraction from the corresponding dihydridosilane 11 and is further supported by the results of density functional calculations. Low coordinated silicon: The frustrated Lewis pair (FLP) formed from an isolable silylene and silylium ion activates dihydrogen (see scheme). In an unexpected follow-up reaction the silyl cation with a Si-H-Si linkage is formed.
Quantitative Assessment of the Lewis Acidity of Silylium Ions
Gro?ekappenberg, Henning,Rei?mann, Matti,Schmidtmann, Marc,Müller, Thomas
, p. 4952 - 4958 (2015/11/09)
The Lewis acidity of several aryl-substituted tetrylium ions was classified experimentally by applying the Gutmann-Beckett method and computationally by calculation of fluoride ion affinities (FIA) (tetrel elements = Si, Ge). According to these measures,
A new synthesis of triarylsilylium ions and their application in dihydrogen activation
Schaefer, Andre,Reissmann, Matti,Schaefer, Annemarie,Saak, Wolfgang,Haase, Detlev,Mueller, Thomas
, p. 12636 - 12638 (2012/02/15)
Well-shuffled: An unexpected substituent distribution reaction via alkyldiarylsilylium ions leads to a distribution of substituents. Starting from alkyldiaryl silanes, this reaction provides a facile synthetic approach to sterically highly hindered triarylsilylium ions. These silylium ions can be applied in dihydrogen activation reactions. Copyright