7440-74-6

Basic information

• Product Name: Indium
• Synonyms: Indium, shot, 2-5mm diam., 99.9+% metals basis;INDIUM, SHOT, 2-5MM DIAM., 99.999%;INDIUM, WIRE, 2.0MM DIAM., 99.99%;INDIUM GRANULATED;INDIUM, FOIL, 0.25MM THICK, 99.999%;INDIUM RODS;INDIUM, FOIL, 0.1MM THICK, 99.999%;INDIUM, FOIL, 1.0MM THICK, 99.999%
• CAS NO: 7440-74-6
• Molecular Formula: In
• Molecular Weight: 114.82
• EINECS: 231-180-0
• Product Categories: Inorganics;Indium;Metal and Ceramic Science;Metals;Catalysis and Inorganic Chemistry;Chemical Synthesis;IndiumMetal and Ceramic Science;IApplication CRMs;ICP CRMs;Alphabetic;Analytical Standards;ICP-OES/-MS;ICPSpectroscopy;Spectroscopy;metal or element
• Mol File: 7440-74-6.mol
• Article Data: 108

Chemical Properties

• Melting Point: 156 °C
• Boiling Point: 2000 °C
• Flash Point: 2072°C
• Appearance: White/wire
• Density: 7.3 g/mL at 25 °C(lit.)
• Vapor Pressure: <0.01 mm Hg ( 25 °C)
• Storage Temp.: Flammables area
• Water Solubility: insoluble
• Stability: Stable. Incompatible with strong acids, strong oxidizing agents, sulfur.
• Merck: 14,4947
• CAS DataBase Reference: Indium(CAS DataBase Reference)
• NIST Chemistry Reference: Indium(7440-74-6)
• EPA Substance Registry System: Indium(7440-74-6)

Safety Data

• Hazard Codes: C,Xn,F,Xi
• Statements: 25-26-34-36/37/38-20/21/22-20-11-36/38
• Safety Statements: 9-16-36/37/39-36-26-45-28
• RIDADR: UN 3089 4.1/PG 2
• WGK Germany: 3
• RTECS: NL1050000
• TSCA: Yes
• HazardClass: 8
• PackingGroup: III
• Hazardous Substances Data: 7440-74-6(Hazardous Substances Data)

Usage

Description

Indium is a soft, ductile, shiny, silver-white metal with a bluish hue, belonging to Group 13 of the periodic table. It is considered a 'poor metal' and is characterized by its low melting point, non-corrosive nature, and resistance to oxidation at room temperature. Indium has a melting point of 156.60°C, a boiling point of 2,075°C, and a density of 7.31 g/cm3.

Uses

Used in Electronics Industry:
Indium is used as a solder for attaching lead wires to semiconductors and transistors due to its low melting point. Its compounds, such as indium arsenide, indium antimonide, and indium phosphide, are used in the construction of specialized semiconductors.
Used in Bearing Alloys:
Indium is used in bearing alloys to improve the electrical conductivity of metals like silver and lead. Alloys of indium and silver, and indium and lead, have better electrical conductivity than pure silver and lead.
Used in Dental Alloys:
Indium is used in dental alloys for its properties and benefits in dental applications.
Used in Semiconductor Research:
Indium is utilized in semiconductor research for the development of new technologies and materials.
Used in Nuclear Reactor Control Rods:
Indium is used in the form of an Ag-In-Cd alloy in nuclear reactor control rods to help control the nuclear fission reaction by absorbing neutrons.
Used in Mirror Surfaces:
Indium's ability to "wet" glass makes it an excellent choice for mirror surfaces, providing a longer-lasting alternative to mercury mirrors.
Used in Synthesis of Therapeutic Particles:
Indium is used in the synthesis of therapeutic particles containing metal ions, characterized by the use of unique ligand sets that make the metal ion complex soluble in biological media to induce selective toxicity in diseased cells.
Occurrence:
Indium is a rare metal, ranking as the 69th most abundant element. It is found in very small concentrations and is always combined with other metal ores. Indium is recovered as a by-product of smelting other metal ores such as aluminum, antimony, cadmium, arsenic, and zinc. It is found in metal ores and minerals located in Russia, Japan, Europe, Peru, Canada, and the western part of the United States.
Industrial uses:
The three largest uses of indium are in semiconductor devices, bearings, and low melting point alloys. Indium is also valued as a plating metal, especially for reflectors, due to its bright color, light reflectance, and corrosion resistance.

Isotopes

There are a total of 73 isotopes of indium. All are radioactive with relativelyshort half-lives, except two that are considered stable. Isotope In-113 makes up just4.29% of the total indium found in the Earth’s crust. The isotope In-115, with a half-lifeof 4.41×10-14 years contributes the balance (95.71%) of the element’s existence in theEarth’s crust.

Origin of Name

Indium’s name is derived from the Latin word indicum, meaning “indigo,” which is the color of its spectral line when viewed by a spectroscope.

Characteristics

Indium has one odd characteristic in that in the form of a sheet, like the metal tin, it willemit a shrieking sound when bent rapidly. Indium has some of the characteristics of othermetals near it in the periodic table and may be thought of as an “extension” of the secondseries of the transition elements. Although it is corrosion-resistant at room temperature, it willoxidize at higher temperatures. It is soluble in acids, but not in alkalis or hot water.

History

Discovered by Reich and Richter, who later isolated the metal. Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores. Until 1924, a gram or so constituted the world’s supply of this element in isolated form. It is probably about as abundant as silver. About 4 million troy ounces ofindium are now produced annually in the Free World. Canada is presently producing more than 1,000,000 troy ounces annually. The present cost of indium is about $2 to $10/g, depending on quantity and purity. It is available in ultrapure form. Indium is a very soft, silvery-white metal with a brilliant luster. The pure metal gives a high-pitched “cry” when bent. It wets glass, as does gallium. Indium has found application in making low-melting alloys; an alloy of 24% indium–76% gallium is liquid at room temperature. Indium is used in making bearing alloys, germanium transistors, rectifiers, thermistors, liquid crystal displays, high definition television, batteries, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion. There is evidence that indium has a low order of toxicity; however, care should be taken until further information is available. Seventy isotopes and isomers are now recognized (more than any other element). Natural indium contains two isotopes. One is stable. The other, 115In, comprising 95.71% of natural indium is slightly radioactive with a very long half-life.

Production Methods

Mineral sources are most commonly dark sphalerite (ZnS), marmatite, and christophite (FeS:ZnS). Indium also occurs in small quantities in tin ores, siderite, and manganese and tungsten ores.Gallium is often associated with indium in zinc and tin ores. Many sulfide ores of copper, iron, lead, cobalt, and bismuth contain small quantities of indium. Zinc smelter flue dusts, in some cases, contain more than 1% indium, and are the largest commercial source of the metal. Other commercial sources are plant residues and dross from the refining of zinc, lead, and cadmium. Indium is recovered from zinc processing residues by acid leaching followed by chemical separation from the accompanying elemental impurities such as zinc, cadmium, aluminum, arsenic, and antimony. Final purification by aqueous electrolysis of the salts at a controlled potential yields a product of 99.9% purity. Canada and Peru supply the greatest amounts of unwrought waste and scrap. Next in order are Japan, Germany, and the United Kingdom. The pattern of indium usage, and potential industrial hazard, is 30% in solders, low-melting alloys, and coatings; 30% in instrument applications and holding devices; 18% in electronic components; 6% in nuclear reactor controls; and 16% in research and other uses.

Reactivity Profile

Indium is a non-combustible solid in bulk form but is flammable in the form of a dust. Reacts with strong oxidizing agents. Reacts explosively with dinitrogen tetraoxide dissolved in acetonitrile. Reacts violently with mercury(II)bromide at 350°C. Mixtures with sulfur ignite when heated.

Hazard

Metal and its compounds are toxic by inhalation.

Hazard

Indium metal dust, particles, and vapors are toxic if ingested or inhaled, as are most of thecompounds of indium. This requires the semiconductor and electronics industries that useindium compounds to provide protection for their workers.

Health Hazard

Indium (In) and compounds cause injury to the lungs, liver and kidneys in animals. There are no reports of toxicity in humans. When indium was applied to the skin there was no evidence of irritation.

Carcinogenicity

Indium has not been tested for its ability to cause cancer in animals. However, the probable carcinogenic properties of indium are linked to alterations in the synthesis and maintenance of enzyme systems that metabolize organic carcinogens. A compromise in the ability of these metabolic systems would lead to altered cellular responses to organic carcinogenic substances.

Purification Methods

Before use, the metal surface is cleaned with dilute HNO3, followed by thorough washing with water and an alcohol rinse. [D.nges in Handbook of Preparative Inorganic Chemistry (Ed. Brauer) Academic Press Vol I p 856 1963.]

InChI:InChI=1/In

Synthetic route

indium sulfate → indium (7440-74-6)

Conditions	Yield
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; electrolyte: in the presence of K-Na-tartarate;	100%
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of H2SO4;	100%
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of acetic acid, Na-acetate;	100%

triisobutylindium (6731-23-3) → indium (7440-74-6) + isobutene (115-11-7)

Conditions	Yield
In decalin byproducts: isobutane; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A >99 B 96%

([(2,6-i-Pr2-C6H3)NC(Me)]2CH)Ga(Et)InEt2 → indium (7440-74-6) + ([(2,6-i-Pr2-C6H3)NC(Me)]2CH)GaEt2 + Triethylindium (923-34-2)

Conditions	Yield
In toluene at 20℃; for 24h; Inert atmosphere; Schlenk technique; Glovebox;	A 96% B 94% C n/a

cobaltocene (1277-43-6) + indium(I) trifluoromethanesulfonate (675617-71-7) → indium (7440-74-6) + [(η(5)-C5H5)2Co]O3SCF3

Conditions	Yield
In dichloromethane addn. of soln. of Cp2Co in CH2Cl2 to suspn. of InOTf in CH2Cl2; pptn., filtration, rinsing of ppt. with CH2Cl2; removal of solvent in vac.; slow evapn of concd. CH2Cl2 soln.; crystn.;	A n/a B 90.1%

indium(II) bromide → indium (7440-74-6) + indium tribromide (13465-09-3)

Conditions	Yield
With dimethyl sulfoxide In benzene	A 90% B n/a
With [2,2]bipyridinyl In benzene	A 90% B n/a
With triethylamine In benzene	A 90% B n/a

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-di-p-tolylethane (538-39-6)

Conditions	Yield
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 85%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-di-m-tolylethane (4662-96-8)

Conditions	Yield
In m-xylene=m-xylol pyrolysis in m-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 83%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-bis(2-methylphenyl)ethane (952-80-7)

Conditions	Yield
In o-xylene=o-xylol pyrolysis in o-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 72%

triisopropyl indium (17144-80-8) → indium (7440-74-6) + 1,2-di-p-tolylethane (538-39-6)

Conditions	Yield
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 67%

indium chloride + lithium pentamethylcyclopentadienide (51905-34-1) → indium (7440-74-6) + indiumpentamethylcyclopentadienide + bis(pentamethylcyclopentadienyl)indium(III) chloride (117469-41-7) + decamethylfulvalene (69446-48-6)

Conditions	Yield
In diethyl ether InCl added to suspension of Li(C5(CH3)5), stirred for 5h at room temp.; exclusion of air and moisture; filtered, washed four times with ether, sublimation; elem. anal.;	A 21% B 62.01% C 5% D 2.5%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 2,2',3,3'-tetrahydro-1H,1'H-1,1'-biindene (82721-36-6)

Conditions	Yield
In further solvent(s) pyrolysis in indane under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 62%

tri-n-butylindium (15676-66-1) → 1-butylene (106-98-9) + indium (7440-74-6)

Conditions	Yield
In decalin byproducts: butene; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A 60% B >99

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-bis(4-chlorophenyl)ethane (5216-35-3)

Conditions	Yield
In further solvent(s) pyrolysis in p-chlorotoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 60%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,1'-bitetralyl (1154-13-8)

Conditions	Yield
In tetralin pyrolysis in tetralin under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 60%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 2,3-diphenylbutane (1857-74-5, 2726-21-8, 4539-34-8, 4613-11-0, 71606-46-7, 5789-35-5)

Conditions	Yield
In ethylbenzene pyrolysis in ethylbenzene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 51%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 3,4-dimethylhexane (583-48-2) + butene-2 (107-01-7) + n-butane (106-97-8)

Conditions	Yield
In decalin pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;	A >99 B 10% C 30% D 40%

tri-sec-butylindium (101749-61-5) → indium (7440-74-6) + 1,2-bis(4-methoxyphenyl)ethane (1657-55-2)

Conditions	Yield
In further solvent(s) pyrolysis in p-methoxytoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;	A n/a B 35%

K(1+)*{HIn(CH2C(CH3)3)3}(1-)=K{HIn(CH2C(CH3)3)3} (139408-74-5) + Chlorodiisopropylphosphane (40244-90-4) → indium (7440-74-6) + (((CH3)3CCH2)2In(P(CH(CH3)2)2))2 (380456-91-7) + ((CH3)3CCH2)3In*P(H)(CH(CH3)2)2 (380456-92-8) + ((CH3)3CCH2)3In*P2(CH(CH3)2)4 (380456-93-9)

Conditions

Yield

In pentane byproducts: H2, (Me3CCH2)P(i-Pr)2, KCl; under Ar, standard vac. line techniques; pentane solns. of ClP(i-Pr)2 and In compd. (molar ratio 1:1) cooled to -78°C; combined; warmed slowly to room temp.; stirred for 2 d; pentane sol. products sepd. from ppt. by extn. (8 times); solvent removed by vac. distn. at 0°C; mixt. of three In compds. obtained; P2(i-Pr)4 adduct crystd. at room temp. in drybox; detd. by (1)H and (31)P NMR spectroscopy;

A n/a B n/a C n/a D 33.7%

indium chloride + N,N,N,N,-tetramethylethylenediamine (110-18-9) + indium(III) chloride (10025-82-8) → indium (7440-74-6) + Cl2InCH2InCl2((CH2N(CH3)2)2)2 (99666-60-1) + InCl3*0.67(CH2N(CH3)2)2*0.67CH2Cl2

Conditions

Yield

With methylene chloride In dichloromethane; toluene equimolar amts. of InCl and InCl3 suspended in CH2Cl2-toluene (1:1, v/v) at -80°C, TMEDA added, stirred, allowed to reach room temp., further stirred for 1 h (total react. time 3-4 h); filtered, crystals deposited on standing collected and dried under vac., further crop obtained by addn. of Et2O to mother liquor and recrystn. (CH2Cl2); InCl3 solvate isolated from separate expt. by addn. of petroleum ether to react. mixt.; elem. anal.;

A n/a B 20% C n/a

lithium tetrahydridoindanate (128448-03-3) + quinuclidine hydrochloride (39896-06-5) + lithium bromide (7550-35-8) → indium (7440-74-6) + [H(quinuclidine)2][In5Br8(quinuclidine)4]

Conditions	Yield
In diethyl ether byproducts: H2, LiCl; quinuclidine hydrochloride added over 5 min to an in situ generated soln. of LiInH4 contg. LiBr in Et2O at -78°C, warmed to -30°C,stirred for 2 h, filtered, kept at this temp. for 72 h; evapd. (vac.), extd. (toluene), crystd. at -50°C overnight;	A n/a B 17%

indium(I) bromide + sodium tri-tert-butylsilanide (103349-41-3) → indium (7440-74-6) + tetrasupersilyldiindium (174809-84-8)

Conditions	Yield
In tetrahydrofuran byproducts: tBu3SiH, tBu3SiBr, (tBu3Si)2; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.;	A n/a B 16.2%
In tetrahydrofuran byproducts: NaBr; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.;	A n/a B 16.2%

(Cp(*)Fe(CO)2)2InI (871347-07-8) + sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate (79060-88-1) → indium (7440-74-6) + [((η5-C5Me5)Fe(CO)2)2(μ-I)][B(C6H3(CF3)2-3,5)4] (871347-11-4)

Conditions	Yield
In dichloromethane (N2 or Ar); a soln. of Fe complex added to a suspn. of B complex at -78°C, warmed to 20°C over 30 min, stirred for 3 h; filtered, layered with hexanes;	A n/a B 15%

[(C2H5)2InSb(Si(CH3)3)2]3 → indium (7440-74-6) + indium(III) antimonide

Conditions	Yield
In neat (no solvent) byproducts: ethylene, HSiMe3; heated under vac. to 400°C for 10 h;	A n/a B 13%

indium chloride + N,N,N,N,-tetramethylethylenediamine (110-18-9) + indium(III) chloride (10025-82-8) → indium (7440-74-6) + Cl2InCH2InCl2((CH2N(CH3)2)2)2 (99666-60-1)

Conditions	Yield
With methylene chloride In dichloromethane InCl and catalitic amts. of InCl3 suspended in CH2Cl2 at -80°C, TMEDA added, allowed to reach room temp. over ca. 2 h; Et2O added, ppt. collected, dried;	A n/a B 10%

dicarbonylcyclopentadienyliodoiron(II) (12078-28-3, 38979-86-1) + [CH((CH3)2CN-2,6-(i)Pr2C6H3)2In] (769959-24-2) + sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate (79060-88-1) → indium (7440-74-6) + [((2,6-diisopropylphenyl-NC(Me))2CH)Fe(III)(η5-cyclopentadienyl)(CO)][B(C6H3(CF3)2-3,5)4] (1036767-96-0)

Conditions	Yield
In tetrahydrofuran under N2 or Ar; THF added to solid mixt. of Fe complex and NaB(C6H3(CF3)2)4; THF soln. of In compd. added; volatiles removed; extd. into toluene; soln. filtered; layered with hexane; crystd. for 1 wk; elem. anal.;	A n/a B 10%

indium(III) oxide → indium (7440-74-6)

Conditions	Yield
With magnesium violent but incomplete reaction;
With sodium carbonate; pyrographite in blow pipe;
With hydrogen in tube with H2-flow;

indium(III) oxide + manganese (7439-96-5) → indium (7440-74-6) + manganese(II) oxide

Conditions	Yield
In neat (no solvent) (Ar); In2O3 and Mn reacted in 1:1 or 1:2 or 2:1 molar ratio; powdered inmortar; sealed under vacuum in quartz ampoule; heated to 723 K and with 0.5 K/h to 973 K; maintained for 7 days; cooled to 0.8 K/h to 473 K; le ft standing at room temp.;

indium (7440-74-6) + water (7732-18-5) → hydrogen (1333-74-0)

Conditions	Yield
byproducts: In2O3; at 473°K and then at 673-773°K more;	100%

arsenic + indium (7440-74-6) → indium arsenide

Conditions	Yield
In neat (no solvent) In, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 150h;	100%
In neat (no solvent) deposited at GaAs by periodic supply of As and Ga species, deposition times was 25 min;
In, As sources used on InAs substrate at 450 to 525°C;
In neat (no solvent) mixt. melting (evac. sealed quartz capsule, 7E-4 hPa); differential thermal anal.;
In neat (no solvent, solid phase) annealing (800 K, 7 d);

indium (7440-74-6) + antimony (7440-36-0) → indium(III) antimonide

Conditions	Yield
In neat (no solvent) In, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 500.+-.20°C, 70h or heated at 400.+-.20°C, 110h;	100%
In melt crystn. from the melt with nearly stoichiometric composition;; single crystals obtained;;
In neat (no solvent) High Pressure; 0.7 GPa, laser heating;

indium (7440-74-6) + 2,3-naphthalenediol (92-44-4) → In{OC10H6(OH)-2,3} (121581-68-8, 121581-73-5)

Conditions	Yield
With Et4NClO4 In acetonitrile byproducts: H2; Electrolysis; using indium metall anode, platinum wire cathode in soln. of Et4NClO4 and dihydroxynaphthalene (2 h, N2, 20 mA), hydrogen gas evolving at the cathode and forming product at the anode; product collected by filtration, washed with acetonitrile and Et2O, dried (vac.); elem. anal.;	100%

indium (7440-74-6) + lanthanum (7439-91-0) + tellurium + cesium chloride → CsInTe2 + Cs3LaCl6

Conditions	Yield
at 299.84 - 999.84℃;	A 100% B n/a

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0286Sn0286In0143Sb0143Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.72Sn0.08In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.24Sn0.56In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.08Sn0.72In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.4Sn0.4In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.35Sn0.35In0.1Sb0.1Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Ge0.5Sn0.5InSbTe4

Conditions	Yield
at 550 - 950℃; for 240h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → GeSnInSbTe5

Conditions	Yield
at 350 - 950℃; for 240h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + antimony (7440-36-0) + tellurium → Ge0.8In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

indium (7440-74-6) + antimony (7440-36-0) + tin (7440-31-5) + tellurium → Sn0.8In0067Sb0067Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

germanium (7440-56-4) + indium (7440-74-6) + tin (7440-31-5) + tellurium → Ge0.4Sn0.4In0.13Te

Conditions	Yield
at 590 - 900℃; for 120h; Inert atmosphere;	100%

indium (7440-74-6) + trifluorormethanesulfonic acid (1493-13-6) + dimethyl sulfoxide (67-68-5) → indium(III) triflate - dimethylsulfoxide (1/7)

Conditions	Yield
With oxygen In dimethyl sulfoxide metal. In under O2 atm. treated with DMSO and triflic acid (3 equiv.) in3 portions, heated at 100°C for 22 h;	99%

arsenic + niobium + indium (7440-74-6) + potassium (7440-09-7) → 10K(1+)*NbInAs6(10-)=K10NbInAs6

Conditions	Yield
In neat (no solvent) mixt. K, Nb, In, and As was sealed in Nb container, enclosed in evacuated fused-silica ampule and heated at 600°C for a week and cooled slowly; elem. anal.;	99%

gadolinium + germanium (7440-56-4) + indium (7440-74-6) → Gd2InGe2

Conditions	Yield
In neat (no solvent) (Ar); a mixt. of Gd, Ge, and In sealed (vac.), heated;	99%

indium (7440-74-6) + lanthanum (7439-91-0) + gold (7440-57-5, 457905-15-6) → LaAu2In4

Conditions	Yield
In melt heating lanthanum, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

indium (7440-74-6) + praseodymium + gold (7440-57-5, 457905-15-6) → PrAu2In4

Conditions	Yield
In melt heating praseodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h in vac., keeping at 1000°C for 120 h; cooing to room temp. for 48 h, X-ray anal.;	99%

cerium (7440-45-1) + indium (7440-74-6) + gold (7440-57-5, 457905-15-6) → CeAu2In4

Conditions	Yield
In melt heating cerium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h invac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

tetrahydrofuran (109-99-9) + indium (7440-74-6) + bromopentafluorobenzene (344-04-7) + bromine (7726-95-6) → bis(tetrahydrofuran)(pentafluorophenyl)indium dibromide

Conditions	Yield
In tetrahydrofuran	99%

pyridine (110-86-1) + indium (7440-74-6) + bromopentafluorobenzene (344-04-7) + bromine (7726-95-6) → bis(pyridine)(pentafluorophenyl)indium dibromide

Conditions	Yield
In dichloromethane	99%

neodymium + indium (7440-74-6) + gold (7440-57-5, 457905-15-6) → NdAu2In4

Conditions	Yield
In melt heating neodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;	99%

indium (7440-74-6) + toluene-4-sulfonic acid (104-15-4) → indium(III) tosylate

Conditions	Yield
In nitromethane at 20℃; for 1.5h; Sonication;	99%

indium (7440-74-6) + ethanethiol (75-08-1) → tris(ethylthio)indane

Conditions	Yield
With oxygen; tetraethylammonium perchlorate In acetonitrile Electrolysis; bubbling O2 through a soln. of thiol in CH3CN/Et4NClO4, electrolysis (open to atmosphere): Pt cathode, In anode, 15V, 50 mA, 1.0 h react. time, at the end of electrolysis stirring for ca. 12 h; filtration, washing with CH3CN, then petroleum ether, drying in vac.; elem. anal.;	98%

indium (7440-74-6) + trifluorormethanesulfonic acid (1493-13-6) → indium(III) triflate

Conditions	Yield
In nitromethane at 20℃; for 0.5h; Sonication;	98%

Upstream product

• 3385-78-2 trimethyl indium 
• 113088-72-5 tri-tert-butylindium(III) 
• 12672-70-7 indium chloride 
• 7732-18-5 water 
• 101749-61-5 tri-sec-butylindium 
• 17144-80-8 triisopropyl indium 
• 6731-23-3 triisobutylindium 
• 15676-66-1 tri-n-butylindium 

Downstream Products

• 13465-09-3 indium tribromide 
• 14280-53-6 bromoindium 
• 12030-05-6 indium(III) nitride 
• 31569-56-9 tris-(pentafluoro phenyl) indane 
• 7440-69-9 bismuth 
• 12672-70-7 indium chloride 
• 31569-57-0 bis-(pentafluoro phenyl) iodo indane 
• 62792-13-6 indium(I) tetrafluoroborate 
• 1196085-01-4 [In(III)(5-bromo-salicylate)3(1,10-phenanthroline)] 
• 1255940-73-8 [InCl(C₆H₅COCH(CH₃)CH₂)2] 
• 1255940-70-5 [InCl(C₆H₅CH₂CH₂COCH₂CH₂)2] 
• 1255940-72-7 [InCl(C₆H₁₁COCH₂CH₂)2] 
• 1255940-64-7 [InCl(ClC₆H₄COCH₂CH₂)2] 
• 1255940-66-9 [InCl(CH₃C₆H₄COCH₂CH₂)2] 

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Electrodeposition of indium onto Mo/Cu for the deposition of Cu(In,Ga)Se2 thin films

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The synthesis and characterisation of the monomeric amidinato-indium(I) and thallium(I) complexes, [M(Piso)]PisoH, M = In or Tl, Piso- = [ArNC(But)NAr]-, Ar = C6H3Pr 2i-2,6, are reported. These complexes, in which the metal centre is chelated by the amidinate ligand in an N,η3-arene- fashion, can be considered as isomers of four-membered group 13 metal(I) carbene analogues. Theoretical studies have compared the relative energies of both isomeric forms of a model complex, [In{PhNC(H)NPh}]. The Royal Society of Chemistry 2005.

Reduction of indium(III) oxide to indium through mechanochemical route

A nonthermal reduction of indium(III) oxide (In2O3) to metallic indium (In) was achieved through mechanochemical route in this work. A mixture of In2O3 and lithium nitride (Li3N) under ammonia (NH3) and/or nitrogen (N2) gas environments was milled in a planetary ball mill with uni-size ZrO2 balls to induce mechanochemical reaction between the starting materials. Metallic indium was obtained after milling for 120 min, and the results are confirmed by X-ray diffraction (XRD) analysis. Washing of the milled product with water to remove by-products using the planetary ball mill for a further 10 min resulted in formation of pellets which were analyzed by EPMA, results clearly show that high purity indium metal was obtained. Copyright

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Shape-controlled metal nanoparticles are of interest because of their wide range of properties that are useful for applications that include optics, electronics, magnetism, and catalysis. Indium metal is an attractive target for nanoparticle synthesis because it is superconducting, plasmonically active, and is a component in low-melting solders and solid-state lubricants. Indium nanoparticles are typically synthesized using harsh physical or chemical techniques, and rigorous shape control is difficult. Here we present a simple and robust kinetically controlled process for synthesizing shape-controlled indium nanoparticles. By controlling the rate of dropwise addition of a solution of NaBH4 in tetraethylene glycol to an alcoholic solution of InCl3 and poly(vinyl pyrrolidone), indium nanoparticles are formed with shapes that include high aspect ratio nanowires and uniform octahedra and truncated octahedra. The zero-dimensional indium nanoparticles exhibit an SPR band centered around 400 nm, and all morphologies are superconducting (Tc = 3.4 K) with higher critical fields than bulk indium. Copyright

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Directed growth of single-crystal indium wires

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Electrodeposition of selenium, indium and copper in an air- and water-stable ionic liquid at variable temperatures

The electrochemical behaviour of Au(1 1 1) and highly oriented pyrolytic graphite (HOPG) substrates in the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([BMP]Tf2N) was investigated using in situ scanning tunneling microscopy (STM). Furthermore, the electrodeposition of Se, In and Cu in the same ionic liquid was investigated. The high thermal stability as well as the large electrochemical window of this ionic liquid compared with aqueous electrolytes allow the direct electrodeposition of grey selenium, indium and copper at variable temperatures, as the first step in making CIS solar cells electrochemically, in a one pot reaction. The results show that grey selenium can be obtained at temperatures ≥100 °C. XRD patterns of the electrodeposit obtained at 100 °C show the characteristic peaks of crystalline grey selenium. Nanocrystalline indium with grain sizes between 100 and 200 nm was formed in the employed ionic liquid, containing 0.1 M InCl3, at room temperature. It was also found that copper(I) species can be introduced into the ionic liquid [BMP]Tf2N by anodic dissolution of a copper electrode and nanocrystalline copper with an average crystallite size of about 50 nm was obtained without additives in the resulting electrolyte.

Preparation of [Et2InSb(SiMe3)2]3; A trimeric single-source precursor to indium antimonide

The 1:1 mole ratio reaction of Et2InCl with Sb(SiMe3)3 results in the formation of [Et2InSb(SiMe3)2]3 (1), a trimeric compound containing a six-membered indium-antimony ring. An X-ray crystal structure has been obtained for the compound substantiating the trimeric nature of 1 in the solid state, however variable-temperature 1H-NMR studies show a dimer/trimer equilibrium for this species in solution. Preliminary thermolysis studies demonstrate its utility in the formation of nanocrystalline InSb.

Selective and Direct Formation of Ethene from CO and H2 over In2O3-Y2O3, -La2O3, and -CeO2 Catalysts

Ethene is slectively formed from CO and H2 over In2O3-containing oxide catalysts such as In2O3-Y2O3, -La2O3, and -CeO2 at 673 K and 67 kPa with the highest selectivity of 43percent for hydrocarbons.

Synthesis of colloidal InSb nanocrystals via in situ activation of InCl3

Indium antimonide (InSb), a narrow band gap III-V semiconductor is a promising infrared-active material for various optoelectronic applications. Synthetic challenge of colloidal InSb nanocrystals (NCs) lies in the limited choice of precursors. Only a few successful synthetic schemes involving highly toxic stibine (SbH3) or air- and moisture-sensitive metal silylamides (In[N(Si-(Me)3)2]3 or Sb[N(Si-(Me)3)2]3) as the precursor have been reported. We found that commercially available precursors InCl3 and Sb[NMe2]3 directly form highly crystalline colloidal InSb nanocrystals in the presence of a base such as LiN(SiMe3)2 or nBuLi. The mean size of the particles can be controlled by simply changing the activating base. This approach offers a one-pot synthesis of InSb NCs from readily available chemicals without the use of complex organometallic precursors.

Synthesis of Heterobimetallic Group 13 Compounds via Oxidative Addition Reaction of Gallanediyl LGa and InEt3

Equimolar amounts of LGa (L = [(2,6-i-Pr2-C6H3)NC(Me)]2CH) and InEt3 were found to react with insertion into the In-carbon bond and formation of LGa(Et)InEt2 (1), while in the presence of the N-heterocyclic carbene It-Bu [C(Nt-Bu2CH)2], the base-stabilized compound LGa(Et)Et2In←It-Bu (2) was formed, which shows an abnormal binding mode of the NHC group. In addition, the reaction of InEt3 with two equivalents of LGa occurred with double insertion and formation of [LGa(Et)]2InEt (3). 1-3 were characterized by heteronuclear NMR (1H, 13C) and IR spectroscopy, their solid-state structures were determined by single-crystal X-ray analyses, and their thermal stability was investigated by in situ NMR spectroscopy. (Chemical Equation Presented).

Group 13 β-ketoiminate compounds: Gallium hydride derivatives as molecular precursors to thin films of Ga2O3

Bis(β-ketoimine) ligands, [R{N(H)C(Me)-CHC(Me)=O}2] (L 1H2, R = (CH2)2; L2H 2, R = (CH2)3), linked by ethylene (L 1) and propylene (L2) bridges have been used to form aluminum, gallium, and indium chloride complexes [Al(L1)Cl] (3), [Ga(Ln)Cl] (4, n = 1; 6, n = 2) and [In(Ln)Cl] (5, n = 1; 7, n = 2). Ligand L1 has also been used to form a gallium hydride derivative [Ga(L1)H] (8), but indium analogues could not be made. β-ketoimine ligands, [Me2N(CH2)3N(H) C(R′)-CHC(R′)=O] (L3H, R′ = Me; L4H, R′ = Ph), with a donor-functionalized Lewis base have also been synthesized and used to form gallium and indium alkyl complexes, [Ga(L 3)Me2] (9) and [In(L3)Me2] (10), which were isolated as oils. The related gallium hydride complexes, [Ga(L n)H2] (11, n = 3; 12, n = 4), were also prepared, but again no indium hydride species could be made. The complexes were characterized mainly by NMR spectroscopy, mass spectrometry, and single crystal X-ray diffraction. The β-ketoiminate gallium hydride compounds (8 and 11) have been used as single-source precursors for the deposition of Ga2O 3 by aerosol-assisted (AA)CVD with toluene as the solvent. The quality of the films varied according to the precursor used, with the complex [Ga(L1)H] (8) giving by far the best quality films. Although the films were amorphous as deposited, they could be annealed at 1000 °C to form crystalline Ga2O3. The films were analyzed by powder XRD, SEM, and EDX.